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NTD6600N-001

Onsemi

NTD6600N-001 by Onsemi

NTD6600N-001 by Onsemi is an N-Channel MOSFET with a Vdss of 100V and Id of 12A. With Rds On of 146mOhm @ 6A, it operates in temperatures from -55 °C to 175°C. Ideal for applications requiring high power dissipation and low gate charge.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,906 parts In-Stock

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Digiode

USA . 1,400 parts In-Stock

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AZTECH Wire

Italy . 158 parts In-Stock

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$8.740

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 6,308 parts In-Stock

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TANS Electronics

Latvia . 5,215 parts In-Stock

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Problanco Electronics

Mexico . 3,270 parts In-Stock

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Kulean Microsystems

USA . 3,123 parts In-Stock

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Corphita

USA . 1,658 parts In-Stock

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UHIMA Technologies

Türkiye . 906 parts In-Stock

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Corohmni

South Africa . 226 parts In-Stock

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Overview

Experience superior performance and reliability with the NTD6600N-001 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality discrete semiconductor products like this N-Channel MOSFET, perfect for a wide range of applications. With a high drain-source voltage, low on-resistance, and efficient gate charge, this product offers exceptional value and benefits to customers looking for a reliable solution. Trust Onsemi for your semiconductor needs and elevate your projects to new heights.

Feature Benefit Bullets

Standard Package: 75

Large quantity available in each package, convenient for bulk orders and inventory management.

Category: Discrete Semiconductor Products / Transistors / FETs, MOSFETs / Single FETs, MOSFETs

Specifically designed for high power applications requiring efficient switching.

FET Type: N-Channel

Suitable for use in applications where N-channel FETs are preferred for their performance characteristics.

Technology: MOSFET (Metal Oxide)

Utilizes MOSFET technology known for high switching speeds and low power consumption.

Drain to Source Voltage (Vdss): 100 V

Able to handle high voltage levels, suitable for a wide range of applications.

Current - Continuous Drain (Id) @ 25 °C: 12A (Ta)

Capable of handling high continuous drain currents without overheating.

Drive Voltage (Max Rds On, Min Rds On): 5V

Low drive voltage requirement ensures compatibility with a wide range of control circuits.

Rds On (Max) @ Id, Vgs: 146mOhm @ 6A, 5V

Low on-state resistance leads to minimal power loss and efficient operation.

Vgs(th) (Max) @ Id: 2V @ 250µA

Low gate threshold voltage ensures controlled switching operations.

Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V

Low gate charge requirement for efficient switching performance.

Vgs (Max) ±20V

Wide gate-source voltage range for flexibility in control voltage requirements.

Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Low input capacitance for faster switching speeds and reduced power losses.

Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)

High power dissipation capability for applications requiring continuous operation at high currents.

Operating Temperature: -55 °C ~ 175°C (TJ)

Wide operating temperature range suitable for various environmental conditions.

Mounting Type: Through Hole

Easy to solder and mount on circuit boards.

Supplier Device Package: IPAK

Industry-standard package for easy integration into existing designs.

Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

Multiple package options for flexibility in design and assembly.

Base Product Number: NTD66

Specific product identification for easy reference and sourcing.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Can be stored and handled under various humidity conditions without degradation.

Technical Specifications

Additional Parts NTD6600N-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

700 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

146mOhm @ 6A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

100 V

Power Dissipation (Max):

1.28W (Ta), 56.6W (Tc)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:

12A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

5V

Package:

Tube

Base Product Number:

NTD66

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD6600N-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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