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NTD32N06L-001

Onsemi

NTD32N06L-001 by Onsemi

NTD32N06L-001 by Onsemi is an N-Channel MOSFET with a Vdss of 60V and Id of 32A. With Rds On of 28mOhm @16A, it operates at -55 °C to 175°C. Ideal for power applications requiring high current handling and low on-resistance in TO-251-3 package.

Median Price

$0.323

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,924 parts In-Stock

1+ parts

-

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$0.317

1k+ parts

$0.263

10k+ parts

$0.235

4,924

-

$0.317

$0.263

$0.235

Verical

USA . 3,574 parts In-Stock

1+ parts

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$0.329

3,574

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$0.329

Distributors (In-Stock)

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Digiode

USA . 720 parts In-Stock

1+ parts

$0.247

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720

$0.247

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Vyrian

USA . 6,923 parts In-Stock

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6,923

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Distributors (Availability)

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Corphita

USA . 863 parts In-Stock

1+ parts

$0.234

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863

$0.234

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Corohmni

South Africa . 347 parts In-Stock

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$0.260

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347

$0.260

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AZTECH Wire

Italy . 569 parts In-Stock

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$21.990

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569

$21.990

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 8,326 parts In-Stock

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8,326

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SupplyDigital Components

Austria . 7,969 parts In-Stock

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Problanco Electronics

Mexico . 5,461 parts In-Stock

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Continental Prestige Electronics

USA . 4,924 parts In-Stock

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$0.238

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4,924

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Kulean Microsystems

USA . 987 parts In-Stock

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987

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UHIMA Technologies

Türkiye . 673 parts In-Stock

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Assy Fe

Spain . 48 parts In-Stock

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Overview

Enhance your electronic projects with the NTD32N06L-001 by Onsemi, a high-quality N-channel MOSFET that delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a variety of applications in the field of discrete semiconductor products. With a maximum drain-to-source voltage of 60V and a continuous drain current of 32A, this MOSFET offers exceptional power handling capabilities. Experience the value and benefits of using this component in your designs, whether you're working on amplifiers, power supplies, or motor control systems. Upgrade your projects with the NTD32N06L-001 and unleash its potential today!

Feature Benefit Bullets

Standard Package: 75

The large quantity in the standard package allows for cost-effective purchasing in bulk.

Technology: MOSFET (Metal Oxide)

MOSFET technology provides high switching speeds and low power consumption, making it ideal for efficient electronic designs.

Drain to Source Voltage (Vdss): 60 V

The high Vdss rating ensures reliable performance in applications requiring higher voltage handling capabilities.

Current - Continuous Drain (Id) @ 25 °C: 32A (Ta)

The high continuous drain current rating allows the MOSFET to handle large amounts of current without overheating.

Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V

Low gate charge means reduced power loss during switching, improving overall efficiency.

Operating Temperature: -55 °C ~ 175°C (TJ)

Wide operating temperature range allows for use in various environmental conditions.

Technical Specifications

Additional Parts NTD32N06L-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

2156-NTD32N06L-001
=NTD32N06L
=NTD32N06L=001
ONSONSNTD32N06L-001
NTD32N06L-001OS

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

1700 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

50 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

28mOhm @ 16A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.5W (Ta), 93.75W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

32A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

5V

Base Product Number:

NTD32

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD32N06L-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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