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NTD32N06-001

Onsemi

NTD32N06-001 by Onsemi

NTD32N06-001 by Onsemi is an N-Channel MOSFET with a Vdss of 60V and Id of 32A. Featuring Rds On of 26mOhm @ 16A, it has a Gate Charge of 60nC @ 10V. Ideal for applications requiring high power dissipation up to 93.75W in a TO-251-3 package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,201 parts In-Stock

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 525 parts In-Stock

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$16.800

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Component Stockers USA

USA . 353 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kulean Microsystems

USA . 4,954 parts In-Stock

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Problanco Electronics

Mexico . 4,277 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,357 parts In-Stock

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SupplyDigital Components

Austria . 1,748 parts In-Stock

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Corphita

USA . 1,713 parts In-Stock

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TANS Electronics

Latvia . 1,184 parts In-Stock

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South Africa . 388 parts In-Stock

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UHIMA Technologies

Türkiye . 48 parts In-Stock

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Overview

Power up your applications with the NTD32N06-001 from Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality products like this N-channel MOSFET that offers a drain-to-source voltage of 60V and a continuous drain current of 32A. Perfect for a range of applications, this transistor provides high performance and reliability. With a low Rds On and high gate charge, this component maximizes efficiency and minimizes power loss. Trust Onsemi for superior products that deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Other Names

Multiple names make it easier to identify and order the correct product.

Standard Package

Comes in a standard package of 75, making it convenient for bulk orders.

FET Type

N-Channel FET type suitable for various applications.

Drain to Source Voltage (Vdss)

High Vdss of 60V allows for usage in a wide range of circuits.

Current - Continuous Drain (Id)

High continuous drain current of 32A makes it suitable for high-power applications.

Rds On (Max)

Low Rds On of 26mOhm ensures minimal power loss and efficient operation.

Gate Charge (Qg)

Low gate charge of 60nC at 10V ensures fast switching speeds.

Operating Temperature

Wide operating temperature range of -55 °C to 175°C allows for use in varying environmental conditions.

Mounting Type

Through-hole mounting type provides secure and stable installation.

Package / Case

Comes in TO-251-3 Short Leads, IPAK, TO-251AA package for easy handling and installation.

Moisture Sensitivity Level (MSL)

MSL level of 1 indicates unlimited exposure to moisture, ensuring product longevity.

Technical Specifications

Additional Parts NTD32N06-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

=NTD32N06
=NTD32N06=001
NTD32N06-001OS

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

1725 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

60 nC @ 10 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

26mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.5W (Ta), 93.75W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

32A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

10V

Base Product Number:

NTD32

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD32N06-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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