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NTD3055L170-001

Onsemi

NTD3055L170-001 by Onsemi

NTD3055L170-001 by Onsemi is an N-Channel MOSFET with a Vdss of 60V and Id of 9A. With Rds On of 170mOhm @ 4.5A, it operates in temperatures from -55 °C to 175°C. Ideal for applications requiring high power dissipation up to 28.5W in TO-251-3 Short Leads package.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 476 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

476

-

$0.132

$0.110

$0.098

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 892 parts In-Stock

1+ parts

$0.103

100+ parts

-

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892

$0.103

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Vyrian

USA . 3,908 parts In-Stock

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3,908

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Distributors (Availability)

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Corphita

USA . 2,254 parts In-Stock

1+ parts

$0.097

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-

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2,254

$0.097

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Corohmni

South Africa . 457 parts In-Stock

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$0.108

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457

$0.108

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Component Stockers USA

USA . 389 parts In-Stock

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$0.110

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$0.110

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389

$0.110

$0.110

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AZTECH Wire

Italy . 301 parts In-Stock

1+ parts

$9.860

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301

$9.860

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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SupplyDigital Components

Austria . 7,966 parts In-Stock

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Kulean Microsystems

USA . 6,717 parts In-Stock

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TANS Electronics

Latvia . 4,816 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Problanco Electronics

Mexico . 167 parts In-Stock

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Overview

Discover the NTD3055L170-001 by Onsemi, a high-quality N-channel MOSFET transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications in discrete semiconductor products and FETs. With a maximum drain to source voltage of 60V and continuous drain current of 9A, this transistor delivers impressive power dissipation capabilities and operates efficiently in a wide temperature range from -55 °C to 175°C. Whether you're designing circuits for automotive, industrial, or consumer electronics, the NTD3055L170-001 provides unmatched value, benefits, and advantages for your projects. Trust Onsemi for superior quality and performance in every component.

Feature Benefit Bullets

Standard Package: 75

Having a standard package of 75 makes this product convenient for bulk purchasing and stocking, suitable for high-volume production.

FET Type: N-Channel

N-Channel FETs are known for their high efficiency and fast switching capabilities, making this product ideal for applications that require high performance.

Drain to Source Voltage (Vdss): 60 V

With a high Vdss of 60 V, this MOSFET can handle relatively high voltage applications, providing versatility in design and application.

Current - Continuous Drain (Id) @ 25 °C: 9A (Ta)

The ability to handle a continuous drain current of 9A at 25 °C ensures that this MOSFET can support high power requirements, making it suitable for use in power electronics applications.

Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)

With a maximum power dissipation of 1.5W at ambient temperature and 28.5W at the junction temperature, this MOSFET can effectively dissipate heat, improving overall reliability and performance.

Technical Specifications

Additional Parts NTD3055L170-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

2156-NTD3055L170-001
ONSONSNTD3055L170-001
=NTD3055L170=001
NTD3055L170-001OS

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

275 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

10 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

170mOhm @ 4.5A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.5W (Ta), 28.5W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

9A (Ta)

Vgs (Max):

±15V

Drive Voltage (Max Rds On, Min Rds On):

5V

Base Product Number:

NTD30

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD3055L170-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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