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NTD24N06L-001

Onsemi

NTD24N06L-001 by Onsemi

NTD24N06L-001 by Onsemi is an N-Channel MOSFET with a Vdss of 60V and Id of 24A. Featuring Rds On of 45mOhm @ 10A, it operates b/w -55 °C to 175°C. Ideal for applications requiring high power dissipation up to 62.5W in TO-251-3 package.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 897 parts In-Stock

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-

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$0.238

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$0.197

10k+ parts

$0.176

897

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$0.238

$0.197

$0.176

Distributors (In-Stock)

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Freelance Electronics

USA . 116 parts In-Stock

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$0.159

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Digiode

USA . 181 parts In-Stock

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$0.185

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$0.185

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Vyrian

USA . 4,577 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 114 parts In-Stock

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$0.159

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114

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Ampacity Inc.

Singapore . 1,553 parts In-Stock

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$0.166

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Corphita

USA . 776 parts In-Stock

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$0.176

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AZTECH Wire

Italy . 1,128 parts In-Stock

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$13.600

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TANS Electronics

Latvia . 7,630 parts In-Stock

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Problanco Electronics

Mexico . 6,466 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,800 parts In-Stock

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Continental Prestige Electronics

USA . 2,397 parts In-Stock

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$0.179

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Kulean Microsystems

USA . 1,134 parts In-Stock

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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Overview

Experience top-notch performance with the NTD24N06L-001 by Onsemi. As a leading manufacturer in the industry, Onsemi's dedication to quality shines through in this N-Channel MOSFET transistor. Ideal for a variety of applications in the electronics and automotive industries, this product offers unparalleled reliability and efficiency. Boost your projects with the exceptional value, benefits, and advantages that the NTD24N06L-001 brings to the table. Trust Onsemi to deliver excellence every time.

Feature Benefit Bullets

Other Names: 2156-NTD24N06L-001

This specific product code makes it easy to identify and reference the product.

Standard Package: 75

Comes in a convenient standard package size of 75.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

This product belongs to the category of discrete semiconductors, specifically transistors, which are essential components in electronic circuits.

Package: Tube

Packaged in a tube for easy handling and storage.

FET Type: N-Channel

N-Channel MOSFETs are commonly used in a wide range of applications and offer specific performance advantages.

Technology: MOSFET (Metal Oxide)

Metal Oxide MOSFET technology ensures efficient operation and performance.

Drain to Source Voltage (Vdss): 60 V

Suitable for applications requiring a drain to source voltage up to 60 volts.

Current - Continuous Drain (Id) @ 25 °C: 24A (Ta)

Capable of handling continuous drain current of 24A.

Drive Voltage (Max Rds On, Min Rds On): 5V

Operates efficiently with a drive voltage of 5V.

Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V

Low on-resistance (Rds On) ensures minimal power loss and efficient operation.

Vgs(th) (Max) @ Id: 2V @ 250µA

Threshold gate-source voltage of 2V ensures reliable turn-on performance.

Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V

Low gate charge ensures fast switching speed and performance.

Vgs (Max): ±15V

Maximum gate-source voltage of ±15V for versatility in operation.

Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V

Input capacitance of 1140 pF ensures efficient operation and minimal input signal distortion.

Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)

Capable of dissipating power efficiently to ensure reliable operation.

Operating Temperature: -55 °C ~ 175°C (TJ)

Wide operating temperature range of -55 °C to 175°C suitable for various environments.

Mounting Type: Through Hole

Through-hole mounting type for easy and secure installation.

Supplier Device Package: IPAK

Supplier device package of IPAK for compatibility and ease of use.

Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

Comes in different package/case options for flexibility in design and application.

Base Product Number: NTD24

This product belongs to the NTD24 series, known for its specific characteristics and performance.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

MSL level of 1 means the product is unlimited in terms of moisture sensitivity, ensuring its reliability in various conditions.

Technical Specifications

Additional Parts NTD24N06L-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

2156-NTD24N06L-001
ONSONSNTD24N06L-001

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

1140 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

32 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

45mOhm @ 10A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.36W (Ta), 62.5W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:

24A (Ta)

Vgs (Max):

±15V

Drive Voltage (Max Rds On, Min Rds On):

5V

Package:

Tube

Base Product Number:

NTD24

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD24N06L-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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