Loading...

NTD24N06-001

Onsemi

NTD24N06-001 by Onsemi

NTD24N06-001 by Onsemi is an N-Channel MOSFET with a Vdss of 60V and Id of 24A. With Rds On of 42mOhm @ 10A, it operates in temperatures from -55 °C to 175°C. Ideal for applications requiring high power dissipation up to 62.5W in TO-251-3 package.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 146 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

146

-

$0.225

$0.186

$0.166

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,325 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

-

1,325

$0.175

-

-

-

Vyrian

USA . 4,173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,173

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,136 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

2,136

$0.166

-

-

-

Corohmni

South Africa . 264 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

264

$0.184

-

-

-

Component Stockers USA

USA . 174 parts In-Stock

1+ parts

$0.190

100+ parts

$0.180

1k+ parts

-

10k+ parts

-

174

$0.190

$0.180

-

-

AZTECH Wire

Italy . 288 parts In-Stock

1+ parts

$21.920

100+ parts

-

1k+ parts

-

10k+ parts

-

288

$21.920

-

-

-

Kulean Microsystems

USA . 8,292 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,292

-

-

-

-

SupplyDigital Components

Austria . 7,749 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,749

-

-

-

-

Problanco Electronics

Mexico . 3,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,154

-

-

-

-

TANS Electronics

Latvia . 1,034 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,034

-

-

-

-

UHIMA Technologies

Türkiye . 369 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

369

-

-

-

-

Overview

Discover the power and efficiency of the NTD24N06-001 by Onsemi, a top-of-the-line N-channel MOSFET designed for a variety of applications in discrete semiconductor products. With a high drain-to-source voltage of 60V and a continuous drain current of 24A, this transistor delivers optimal performance and reliability. Whether you're working on power supplies, motor controls, or LED lighting, this component offers exceptional value and benefits to help you achieve your project goals with ease. Trust in Onsemi's reputation for quality and innovation, and elevate your designs with the NTD24N06-001 today.

Feature Benefit Bullets

Drain to Source Voltage (Vdss): 60 V

High Vdss allows for reliable operation in circuits with higher voltage requirements.

Current - Continuous Drain (Id) @ 25 °C: 24A (Ta)

High continuous drain current rating enables the product to handle large loads without overheating.

Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V

Low on-resistance (Rds On) ensures efficient power transfer and minimal heat dissipation.

Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V

Low gate charge allows for fast switching speeds and improved overall performance.

Operating Temperature: -55 °C ~ 175°C (TJ)

Wide operating temperature range makes the product suitable for a variety of environments and applications.

Technical Specifications

Additional Parts NTD24N06-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

=NTD24N06=001
NTD24N06-001OS
=NTD24N06

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

1200 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

48 nC @ 10 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

42mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Supplier Device Package:

I-PAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.36W (Ta), 62.5W (Tj)

Package / Case:

TO-251-3 Short Leads, IPak, TO-251AA

Technology:

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:

24A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

10V

Package:

Tube

Base Product Number:

NTD24

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD24N06-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.