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NTD20P06L-001

Onsemi

NTD20P06L-001 by Onsemi

Limited Part Number Data;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,903 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,903

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Digiode

USA . 685 parts In-Stock

1+ parts

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685

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Mil-Aero Solutions, Inc.

USA . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 201 parts In-Stock

1+ parts

$12.105

100+ parts

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1k+ parts

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201

$12.105

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Ampacity Inc.

Singapore . 883 parts In-Stock

1+ parts

$199.100

100+ parts

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883

$199.100

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Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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13,000

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Kulean Microsystems

USA . 7,888 parts In-Stock

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7,888

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Problanco Electronics

Mexico . 7,594 parts In-Stock

1+ parts

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7,594

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Argo Parts USA

USA . 5,110 parts In-Stock

1+ parts

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5,110

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SupplyDigital Components

Austria . 4,757 parts In-Stock

1+ parts

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4,757

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Corphita

USA . 1,358 parts In-Stock

1+ parts

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1,358

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TANS Electronics

Latvia . 1,313 parts In-Stock

1+ parts

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1,313

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Continental Prestige Electronics

USA . 963 parts In-Stock

1+ parts

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963

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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249

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Corohmni

South Africa . 105 parts In-Stock

1+ parts

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105

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Technical Specifications

Additional Parts NTD20P06L-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

NTD20P06L-001OS
=NTD20P06L
=NTD20P06L=001

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

P-Channel

Input Capacitance (Ciss) (Max) @ Vds:

1190 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

26 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

150mOhm @ 7.5A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

65W (Tc)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

15.5A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

5V

Base Product Number:

NTD20

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD20P06L-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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