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NTD18N06L-001

Onsemi

NTD18N06L-001 by Onsemi

NTD18N06L-001 by Onsemi is an N-Channel MOSFET with a Drain to Source Voltage of 60V and Continuous Drain Current of 18A. With a Gate Charge of 22nC at 5V, it operates in temperatures ranging from -55 °C to 175°C. Ideal for applications requiring high power dissipation up to 55W in TO-251-3 Short Leads package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,895 parts In-Stock

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Digiode

USA . 664 parts In-Stock

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AZTECH Wire

Italy . 123 parts In-Stock

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$15.380

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Component Stockers USA

USA . 735 parts In-Stock

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$99.990

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735

$99.990

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TANS Electronics

Latvia . 6,005 parts In-Stock

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SupplyDigital Components

Austria . 5,215 parts In-Stock

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Problanco Electronics

Mexico . 4,328 parts In-Stock

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Corphita

USA . 1,714 parts In-Stock

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UHIMA Technologies

Türkiye . 433 parts In-Stock

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Corohmni

South Africa . 285 parts In-Stock

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Kulean Microsystems

USA . 38 parts In-Stock

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Overview

Looking to enhance your electronics project? The NTD18N06L-001 by Onsemi is a top-quality N-Channel MOSFET that guarantees reliable performance. With a maximum drain-to-source voltage of 60V and a continuous drain current of 18A, this transistor is perfect for a wide range of applications. Whether you're designing power supplies, motor controls, or battery management systems, this component offers high efficiency and low power dissipation. Trust Onsemi's expertise in discrete semiconductor products and choose the NTD18N06L-001 for superior results every time.

Feature Benefit Bullets

Other Names

Having multiple other names makes it easier to search for and identify the product.

Standard Package

Comes in a standard package size of 75 units, making it convenient for stocking and handling.

Category

Part of the Discrete Semiconductor Products category, ensuring high performance and reliability.

Packaging

Packaged in a tube for protection and easy storage.

Technology

Utilizes MOSFET technology for efficient operation and power handling.

Drain to Source Voltage (Vdss)

With a high voltage rating of 60V, it can handle a wide range of applications.

Current - Continuous Drain (Id) @ 25 °C

Capable of handling a continuous drain current of 18A, making it suitable for high-power applications.

Gate Charge (Qg) (Max) @ Vgs

Low gate charge of 22nC ensures fast switching speeds and efficiency.

Operating Temperature

Wide operating temperature range of -55 °C to 175°C allows for use in various environments.

Mounting Type

Designed for through-hole mounting, providing secure installation and heat dissipation.

Technical Specifications

Additional Parts NTD18N06L-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

=NTD18N06L=001
=NTD18N06L
NTD18N06L-001OS

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

675 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

22 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

65mOhm @ 9A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

2.1W (Ta), 55W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

18A (Ta)

Vgs (Max):

±15V

Drive Voltage (Max Rds On, Min Rds On):

5V

Base Product Number:

NTD18

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD18N06L-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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