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NTD15N06L-001

Onsemi

NTD15N06L-001 by Onsemi

NTD15N06L-001 by Onsemi is an N-Channel MOSFET with a 60V drain-source voltage, 15A continuous drain current, and 100mOhm max on-resistance. It is used in applications requiring high power dissipation up to 48W, operating in temperatures ranging from -55 °C to 175°C. The device comes in a TO-251-3 package suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Rochester

USA . 475 parts In-Stock

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Vyrian

USA . 2,533 parts In-Stock

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Digiode

USA . 1,415 parts In-Stock

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AZTECH Wire

Italy . 781 parts In-Stock

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Component Stockers USA

USA . 486 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,028 parts In-Stock

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Problanco Electronics

Mexico . 5,899 parts In-Stock

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SupplyDigital Components

Austria . 4,206 parts In-Stock

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TANS Electronics

Latvia . 3,300 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 468 parts In-Stock

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UHIMA Technologies

Türkiye . 270 parts In-Stock

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Corphita

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Overview

Discover the NTD15N06L-001 by Onsemi, a high-quality N-Channel MOSFET that offers exceptional performance and reliability. With a maximum voltage of 60V and continuous drain current of 15A, this transistor is perfect for a wide range of applications in the electronics industry. Whether you're designing power supplies, motor controls, or lighting systems, this component provides efficiency and precision. Onsemi's commitment to excellence ensures that you get top-notch quality every time. Upgrade your projects with the NTD15N06L-001 and experience the difference today.

Feature Benefit Bullets

Standard Package

Packaging in a standard package of 75 units makes it convenient for bulk purchasing and inventory management.

FET Type

Being an N-Channel MOSFET, it offers efficient switching capabilities and low on-state resistance for better performance.

Drain to Source Voltage (Vdss)

With a Vdss of 60V, this MOSFET can handle moderate voltage levels in various applications.

Current - Continuous Drain (Id)

Capable of handling a continuous drain current of 15A at 25 °C, making it suitable for high-power applications.

Gate Charge (Qg)

Low gate charge of 20nC at 5V ensures efficient switching and minimal power loss.

Operating Temperature

Wide operating temperature range of -55 °C to 175°C allows for use in extreme environmental conditions.

Mounting Type

Through hole mounting type ensures secure and reliable installation on PCBs.

Technical Specifications

Additional Parts NTD15N06L-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

=NTD15N06L=001
NTD15N06L-001OS
=NTD15N06L

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

440 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

100mOhm @ 7.5A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.5W (Ta), 48W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

15A (Ta)

Vgs (Max):

±15V

Drive Voltage (Max Rds On, Min Rds On):

5V

Base Product Number:

NTD15

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD15N06L-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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