Loading...

NTD15N06-001

Onsemi

NTD15N06-001 by Onsemi

NTD15N06-001 by Onsemi is an N-Channel MOSFET with a Vdss of 60V and Id of 15A. It features Rds On of 90mOhm @ 7.5A, Qg of 20nC @ 10V, and operates in temperatures ranging from -55 °C to 175°C. Ideal for applications requiring high power dissipation up to 48W in TO-251-3 Short Leads package.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

1,200

-

$0.225

$0.186

$0.166

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 604 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

-

604

$0.175

-

-

-

Vyrian

USA . 6,256 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,256

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,921 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

1,921

$0.166

-

-

-

Corohmni

South Africa . 437 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

437

$0.184

-

-

-

AZTECH Wire

Italy . 986 parts In-Stock

1+ parts

$8.660

100+ parts

-

1k+ parts

-

10k+ parts

-

986

$8.660

-

-

-

Problanco Electronics

Mexico . 8,136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,136

-

-

-

-

TANS Electronics

Latvia . 7,755 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,755

-

-

-

-

SupplyDigital Components

Austria . 5,045 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,045

-

-

-

-

Kulean Microsystems

USA . 793 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

793

-

-

-

-

UHIMA Technologies

Türkiye . 102 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

102

-

-

-

-

Overview

Discover the NTD15N06-001 by Onsemi, a top-quality N-Channel MOSFET that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this innovative product is ideal for a wide range of applications in the Discrete Semiconductor Products category. With a maximum drain-to-source voltage of 60V and a continuous drain current of 15A, the NTD15N06-001 delivers outstanding efficiency and power capabilities. Trust Onsemi to provide you with cutting-edge technology and superior products that meet your needs. Elevate your projects with the NTD15N06-001 from Onsemi today!

Feature Benefit Bullets

Standard Package: 75

Large quantity in standard package allows for easy stocking and availability for bulk orders.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Clear categorization ensures that this product meets the specific requirements for transistor applications.

Packaging: Tube

Tube packaging ensures protection during transportation and storage, preventing damage to the product.

Technology: MOSFET (Metal Oxide)

Utilizing MOSFET technology provides high efficiency and fast switching speeds.

Drain to Source Voltage (Vdss): 60 V

Suitable for applications requiring a voltage rating up to 60V.

Current - Continuous Drain (Id) @ 25 °C: 15A (Ta)

Capable of handling high continuous drain current, making it suitable for high power applications.

Drive Voltage (Max Rds On, Min Rds On): 10V

Works well with a drive voltage of up to 10V, providing flexibility in design and compatibility with various systems.

Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V

Low on-resistance ensures minimal power loss and efficient operation.

Vgs(th) (Max) @ Id: 4V @ 250µA

Precise threshold voltage allows for accurate control and regulation of the MOSFET.

Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V

Low gate charge results in reduced switching losses and improved overall performance.

Vgs (Max): ±20V

Wide gate-source voltage range enhances versatility and compatibility in different circuit designs.

Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V

Low input capacitance minimizes switching time and improves efficiency.

Power Dissipation (Max): 1.5W (Ta), 48W (Tj)

High power dissipation capability ensures reliable performance under varying operating conditions.

Operating Temperature: -55 °C ~ 175°C (TJ)

Wide operating temperature range allows for use in extreme conditions and diverse applications.

Mounting Type: Through Hole

Through-hole mounting provides secure and reliable connections for the MOSFET.

Supplier Device Package: IPAK

IPAK package offers convenient handling and installation of the MOSFET.

Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

Variety of package options for compatibility with different circuit layouts and configurations.

Base Product Number: NTD15

Recognizable base product number for easy identification and selection.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

MSL rating ensures that the product is not sensitive to moisture, making it suitable for various environments.

Technical Specifications

Additional Parts NTD15N06-001 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

ONSONSNTD15N06-001
=NTD15N06=001
2156-NTD15N06-001
=NTD15N06
NTD15N06-001OS

Operating Temperature:

-55°C ~ 175°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

450 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 10 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

90mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Supplier Device Package:

IPAK

Standard Package:

75

Drain to Source Voltage (Vdss):

60 V

Power Dissipation (Max):

1.5W (Ta), 48W (Tj)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Technology:

MOSFET (Metal Oxide)

Packaging:

Tube

Current - Continuous Drain (Id) @ 25°C:

15A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

10V

Base Product Number:

NTD15

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD15N06-001 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.