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NSP8501V6MUT5G

Onsemi

NSP8501V6MUT5G by Onsemi

NSP8501V6MUT5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 7.3V breakdown voltage, 1uA max reverse current, and 11.5V max clamping voltage. It is used for transient suppression in applications compliant with IEC-61000-4-2 and 4-5 standards, operating b/w -65 °C to 150°C.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,998 parts In-Stock

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Vyrian

USA . 1,825 parts In-Stock

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SupplyDigital Components

Austria . 7,282 parts In-Stock

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Problanco Electronics

Mexico . 6,654 parts In-Stock

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TANS Electronics

Latvia . 3,117 parts In-Stock

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Corphita

USA . 2,144 parts In-Stock

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Kulean Microsystems

USA . 2,017 parts In-Stock

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UHIMA Technologies

Türkiye . 635 parts In-Stock

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Corohmni

South Africa . 363 parts In-Stock

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Overview

Experience unmatched protection and reliability with the NSP8501V6MUT5G transient suppression device by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. This single-configured device is ideal for a wide range of applications, offering customers peace of mind knowing their electronics are safeguarded against voltage surges. With a nominal breakdown voltage of 7.3V and maximum clamping voltage of 11.5V, this chip carrier device ensures optimal performance in any environment. Trust Onsemi to provide the ultimate solution for your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ensuring long-term reliability.

Nominal Breakdown Voltage: 7.3 V

The nominal breakdown voltage of 7.3 V indicates that the device can effectively suppress transient voltages up to this level, providing protection to sensitive components.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures minimal leakage and power consumption, making the device efficient in its operation.

Minimum Breakdown Voltage: 6.5 V

The minimum breakdown voltage of 6.5 V ensures that the device starts conducting at a lower voltage level, offering protection against lower magnitude transient events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures fast response time and efficient suppression of transient voltages, enhancing the overall reliability of the device.

Maximum Clamping Voltage: 11.5 V

The maximum clamping voltage of 11.5 V indicates the maximum voltage level that the device will clamp transient voltages to, preventing damage to downstream components.

Technical Specifications

Transient Suppression Devices NSP8501V6MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6.5 V

Nominal Breakdown Voltage:

7.3 V

Maximum Clamping Voltage:

11.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

6.3 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

6.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSP8501V6MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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