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NJVBDX53C

Onsemi

NJVBDX53C by Onsemi

Limited Part Number Data;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

NJVBDX53C by Onsemi
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 31 parts In-Stock

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31

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Digiode

USA . 1,996 parts In-Stock

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Vyrian

USA . 1,914 parts In-Stock

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Nova Conductors

Japan . 24 parts In-Stock

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AZTECH Wire

Italy . 865 parts In-Stock

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$18.440

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865

$18.440

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Ampacity Inc.

Singapore . 31 parts In-Stock

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$196.100

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31

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Problanco Electronics

Mexico . 4,497 parts In-Stock

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Continental Prestige Electronics

USA . 4,489 parts In-Stock

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TANS Electronics

Latvia . 3,874 parts In-Stock

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Argo Parts USA

USA . 1,727 parts In-Stock

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UHIMA Technologies

Türkiye . 828 parts In-Stock

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828

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Kulean Microsystems

USA . 375 parts In-Stock

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Corphita

USA . 233 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Advanced Electronics

New Zealand . 31 parts In-Stock

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SupplyDigital Components

Austria . 29 parts In-Stock

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Technical Specifications

Additional Parts NJVBDX53C attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Category:

Discrete Semiconductor Products
Transistors Bipolar (BJT) Single Bipolar Transistors

Current - Collector (Ic) (Max):

8 A

Vce Saturation (Max) @ Ib, Ic:

2V @ 12mA, 3A

Mounting Type:

Through Hole

Voltage - Collector Emitter Breakdown (Max):

100 V

Supplier Device Package:

TO-220

Standard Package:

50

Transistor Type:

NPN - Darlington

Package / Case:

TO-220-3

Power - Max:

65 W

Current - Collector Cutoff (Max):

500µA

Package:

Tube

DC Current Gain (hFE) (Min) @ Ic, Vce:

750 @ 3A, 3V

Base Product Number:

NJVBDX5

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

NJVBDX53C Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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