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NE5532NG

Onsemi

NE5532NG by Onsemi

NE5532NG by Onsemi is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000uV and Nominal Common Mode Reject Ratio of 100dB. Widely used in audio applications due to its high voltage gain and low bias current.

Median Price

$1.031

Lifecycle Status

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4

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1k+

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Chip Stock

USA . 55,000 parts In-Stock

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Bristol Electronics

USA . 268 parts In-Stock

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$1.031

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$0.619

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$0.619

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AZTECH Wire

Italy . 708 parts In-Stock

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$19.360

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Microchip USA

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UHIMA Technologies

Türkiye . 746 parts In-Stock

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Singapore . 392 parts In-Stock

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Overview

Discover the NE5532NG by Onsemi, a high-quality operational amplifier that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this op amp is perfect for a wide range of applications. With its low input offset voltage and high common mode rejection ratio, this product delivers superior precision and accuracy. Experience the benefits of the NE5532NG's advanced technology and innovative design, providing customers with unmatched value and efficiency. Whether you are looking to amplify signals or control voltages, this op amp is the ideal solution for your needs. Choose Onsemi's NE5532NG for unparalleled quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 5000 uV

The low maximum input offset voltage ensures minimal error in signal amplification, making this operational amplifier highly accurate.

Maximum Average Bias Current (IIB): 1 uA

With a low maximum average bias current, this operational amplifier is energy-efficient and suitable for low-power applications.

Nominal Common Mode Reject Ratio: 100 dB

The high nominal common mode reject ratio ensures effective rejection of common-mode noise, resulting in a clean output signal.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V provides sufficient power for the operational amplifier to operate effectively in various circuits.

Frequency Compensation: YES

The presence of frequency compensation ensures stability in the operational amplifier's performance, making it reliable for different frequency ranges.

Nominal Unity Gain Bandwidth: 10000 kHz

The high nominal unity gain bandwidth of 10MHz allows the operational amplifier to handle high-frequency signals accurately, suitable for demanding applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in a wide range of applications such as signal processing, filtering, and instrumentation.

Technical Specifications

Operational Amplifiers (Op Amps) NE5532NG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

9 V/us

Peak Bias Current:

1 uA

Maximum Bias Current (IIB) @25 °C:

800 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

16 mA

Physical Characteristics

Length:

0.385 in (9.78 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.175 in (4.45 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP7/8,.3

Trade Compliance

NE5532NG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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