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NE5532ANG

Onsemi

NE5532ANG by Onsemi

NE5532ANG by Onsemi is a dual operational amplifier with 100dB CMRR and 10kHz unity gain bandwidth. It operates at ±15V supplies, has 8 terminals, and consumes up to 16mA. Ideal for audio applications due to its high voltage gain and low bias current.

Median Price

$0.702

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.702

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450

$0.702

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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Vyrian

USA . 6,367 parts In-Stock

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6,367

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Digiode

USA . 2,007 parts In-Stock

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2,007

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,215 parts In-Stock

1+ parts

$0.410

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1,215

$0.410

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Continental Prestige Electronics

USA . 1,762 parts In-Stock

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$0.702

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$0.688

1,762

$0.702

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$0.688

Argo Parts USA

USA . 1,641 parts In-Stock

1+ parts

$0.702

100+ parts

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$0.681

1,641

$0.702

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$0.681

AZTECH Wire

Italy . 231 parts In-Stock

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$11.472

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231

$11.472

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SupplyDigital Components

Austria . 6,679 parts In-Stock

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6,679

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Microchip USA

USA . 3,141 parts In-Stock

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3,141

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Problanco Electronics

Mexico . 2,421 parts In-Stock

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2,421

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TANS Electronics

Latvia . 2,289 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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UHIMA Technologies

Türkiye . 352 parts In-Stock

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352

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Vigor

Singapore . 200 parts In-Stock

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Corphita

USA . 151 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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Kulean Microsystems

USA . 59 parts In-Stock

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59

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Overview

Upgrade your audio systems with the NE5532ANG by Onsemi, a top-of-the-line operational amplifier designed for superior performance. Manufactured by Onsemi, known for their high-quality electronic components, this op amp offers unmatched precision and reliability. Whether you're working on professional audio equipment or DIY projects, the NE5532ANG provides exceptional sound quality and low noise operation. Experience the difference with this innovative product that delivers value and benefits to all customers looking for top-tier amplification solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is cost-effective and durable, making the product reliable and suitable for various applications.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures accurate performance and minimizes errors in signal processing.

Maximum Average Bias Current (IIB): 1 uA

Low bias current helps in reducing power consumption and improves the stability of the amplifier.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio ensures better rejection of noise and interference, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 15

Nominal supply voltage of 15V offers a good balance between performance and power consumption for various applications.

Maximum Supply Voltage Limit: 22 V

High supply voltage limit provides flexibility in power supply options and allows for a wider range of operating conditions.

Technology: BIPOLAR

Bipolar technology offers high gain, linearity, and low distortion, making the amplifier suitable for precision applications.

Nominal Unity Gain Bandwidth: 10000 kHz

High unity gain bandwidth ensures the amplifier can handle high-frequency signals with minimal distortion, suitable for high-speed applications.

Technical Specifications

Operational Amplifiers (Op Amps) NE5532ANG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

9 V/us

Peak Bias Current:

1 uA

Maximum Bias Current (IIB) @25 °C:

800 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

16 mA

Physical Characteristics

Length:

0.385 in (9.78 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.175 in (4.45 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP7/8,.3

Trade Compliance

NE5532ANG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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