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NE5517DR2

Onsemi

NE5517DR2 by Onsemi

NE5517DR2 by Onsemi is a dual operational amplifier with 5000uV max input offset voltage and 8uA max average bias current. It operates at +/-15V power supplies, has 110dB CMRR, and 2000kHz unity gain bandwidth. Ideal for commercial applications requiring precise signal amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 30,936 parts In-Stock

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Chip Stock

USA . 35,000 parts In-Stock

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USA . 30,936 parts In-Stock

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Vyrian

USA . 13,063 parts In-Stock

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Digiode

USA . 182 parts In-Stock

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AZTECH Wire

Italy . 324 parts In-Stock

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$10.830

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QUARKTWIN TECHNOLOGY LTD

USA . 25,951 parts In-Stock

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Problanco Electronics

Mexico . 5,749 parts In-Stock

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Microchip USA

USA . 4,152 parts In-Stock

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Kulean Microsystems

USA . 2,412 parts In-Stock

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TANS Electronics

Latvia . 1,491 parts In-Stock

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SupplyDigital Components

Austria . 1,400 parts In-Stock

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Corphita

USA . 840 parts In-Stock

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RC Electronics

USA . 600 parts In-Stock

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Vigor

Singapore . 484 parts In-Stock

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Metaverse IC Inc.

Canada . 344 parts In-Stock

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Corohmni

South Africa . 246 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Overview

Discover the power of precision with the NE5517DR2 operational amplifier by Onsemi. Crafted with top-notch quality and expertise, this op amp offers unparalleled performance and reliability for a wide range of applications. From audio equipment to instrumentation, this versatile component delivers exceptional value, enhanced functionality, and superior results. Elevate your projects with the NE5517DR2 and experience the difference that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy package body material ensures the longevity and protection of the operational amplifier, making it a reliable and sturdy choice for various applications.

Maximum Input Offset Voltage: 5000 uV

With a low maximum input offset voltage, this operational amplifier can provide accurate and precise amplification of signals without significant distortion, making it suitable for high precision applications.

Maximum Average Bias Current (IIB): 8 uA

The low maximum average bias current helps in minimizing power consumption and ensures stable performance of the operational amplifier, making it energy-efficient for various circuit designs.

Surface Mount: YES

The surface mount capability of this operational amplifier allows for easy and convenient installation on circuit boards, saving time and effort during the assembly process.

Nominal Common Mode Reject Ratio: 110 dB

With a high nominal common mode reject ratio, this operational amplifier is effective in rejecting unwanted noise and interference, resulting in clean and accurate signal amplification.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures compatibility with standard power supply configurations, making it easy to integrate this operational amplifier into various circuit designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this operational amplifier can withstand elevated temperatures without compromising its performance, making it suitable for industrial and harsh environment applications.

Technology: BIPOLAR

The bipolar technology used in this operational amplifier offers high precision and low noise operation, making it ideal for applications that require accurate signal processing and amplification.

Nominal Unity Gain Bandwidth: 2000 kHz

The high nominal unity gain bandwidth of 2000 kHz ensures fast and efficient signal processing, making this operational amplifier suitable for high-speed applications such as signal conditioning and data acquisition.

Packing Method: TAPE AND REEL

The tape and reel packing method provides convenient storage, handling, and shipping of the operational amplifiers, ensuring easy integration into large-scale production processes.

Technical Specifications

Operational Amplifiers (Op Amps) NE5517DR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Transconductance

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

50 V/us

Peak Bias Current:

8 uA

Maximum Bias Current (IIB) @25 °C:

5 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.39 in (9.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

16

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP16,.25

Trade Compliance

NE5517DR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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