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NE5517ANG

Onsemi

NE5517ANG by Onsemi

NE5517ANG by Onsemi is a dual operational amplifier with 5000uV max input offset voltage, 7uA max average bias current, and 110dB nominal CMRR. Ideal for commercial applications requiring high precision signal processing in a compact IN-LINE package.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 34,000 parts In-Stock

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Vyrian

USA . 13,153 parts In-Stock

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Digiode

USA . 1,601 parts In-Stock

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Connector Distribution Corp

USA . 34 parts In-Stock

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Right Parts Inc.

USA . 34 parts In-Stock

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AZTECH Wire

Italy . 1,182 parts In-Stock

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Problanco Electronics

Mexico . 3,465 parts In-Stock

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SupplyDigital Components

Austria . 2,408 parts In-Stock

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Corphita

USA . 1,465 parts In-Stock

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Kulean Microsystems

USA . 1,109 parts In-Stock

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Vigor

Singapore . 573 parts In-Stock

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UHIMA Technologies

Türkiye . 469 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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Microchip USA

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Overview

Unleash the power of precision with the NE5517ANG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability. This operational amplifier is perfect for a wide range of applications, offering unparalleled performance and versatility. Experience enhanced functionality and seamless operation with the NE5517ANG, providing customers with exceptional value and benefits. Elevate your projects to new heights with this innovative product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term usage.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures accurate signal processing and minimal error.

Maximum Average Bias Current (IIB): 7 uA

Low bias current helps in minimizing power consumption and improving overall performance.

No. of Functions: 2

Availability of multiple functions in a single package offers versatility and convenience for different circuit applications.

Nominal Common Mode Reject Ratio: 110 dB

High common mode rejection ratio ensures effective rejection of noise and interference for clean signal output.

Nominal Supply Voltage / Vsup (V): 15

Nominal supply voltage of 15V provides stable power input for consistent operation.

Technology: BIPOLAR

Bipolar technology offers high performance, low noise, and reliable operation for various amplifier applications.

Nominal Unity Gain Bandwidth: 2000 kHz

High unity gain bandwidth allows for efficient signal amplification and processing at different frequencies.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable operation within standard temperature ranges for commercial applications.

Technical Specifications

Operational Amplifiers (Op Amps) NE5517ANG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Transconductance

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

50 V/us

Peak Bias Current:

7 uA

Maximum Bias Current (IIB) @25 °C:

5 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.755 in (19.175 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.173 in (4.4 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP16,.3

Trade Compliance

NE5517ANG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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