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NDCTR100170A

Onsemi

NDCTR100170A by Onsemi

The Onsemi NDCTR100170A is a Schottky rectifier diode with 1700V reverse test voltage and 145A max output current. It operates b/w -55 to 175 °C, dissipating up to 1666W power. Ideal for high-efficiency applications due to its silicon carbide material and surface-mount configuration.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,798 parts In-Stock

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Digiode

USA . 1,502 parts In-Stock

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AZTECH Wire

Italy . 1,057 parts In-Stock

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$8.580

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TANS Electronics

Latvia . 8,142 parts In-Stock

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Problanco Electronics

Mexico . 5,074 parts In-Stock

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Kulean Microsystems

USA . 4,649 parts In-Stock

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SupplyDigital Components

Austria . 4,313 parts In-Stock

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UHIMA Technologies

Türkiye . 618 parts In-Stock

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Corphita

USA . 214 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Overview

Experience unmatched quality and reliability with the NDCTR100170A by Onsemi, a leading manufacturer in the industry. This diode rectifier offers exceptional performance in efficiency applications, ensuring optimal functionality even in extreme temperatures. With a maximum reverse test voltage of 1700V and a maximum output current of 145A, this product provides unparalleled power dissipation of 1666W. Trust in Onsemi's cutting-edge technology and choose the NDCTR100170A for superior results in your projects.

Feature Benefit Bullets

Config: SINGLE

A single configuration makes it easy to use and install in various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient placement on circuit boards.

Maximum Reverse Current: 40 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: SQUARE

Square shape provides stability and ease of handling during installation.

Reverse Test Voltage: 1700 V

High reverse test voltage ensures reliability and protection against voltage spikes.

Package Style (Meter): UNCASED CHIP

Uncased chip design allows for compact and efficient integration into electronic devices.

Application: EFFICIENCY

Designed for efficiency, making it suitable for high-performance applications.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for versatile use in different environments.

Minimum Operating Temperature: -55 °C

Wide range of operating temperatures ensures reliability in extreme conditions.

Terminal Position: UPPER

Upper terminal position facilitates easy connection in various circuit layouts.

Maximum Power Dissipation: 1666 W

High power dissipation capability allows for handling substantial power loads.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC power.

Maximum Output Current: 145 A

High output current rating enables the diode to handle heavy load currents effectively.

Technology: SCHOTTKY

Schottky technology offers fast switching and low forward voltage drop for improved efficiency.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and reduces space requirements on PCBs.

Maximum Repetitive Peak Reverse Voltage: 1700 V

High repetitive peak reverse voltage rating provides reliable protection against voltage surges.

Maximum Non Repetitive Peak Forward Current: 574 A

High non-repetitive peak forward current handling capability ensures robust performance in transient conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high temperature and high frequency operation for reliable performance.

Technical Specifications

Diodes & Rectifiers NDCTR100170A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

574 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

145 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Power Dissipation:

1666 W

Maximum Repetitive Peak Reverse Voltage:

1700 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

1700 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NDCTR100170A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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