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NCV5230DR2G

Onsemi

NCV5230DR2G by Onsemi

NCV5230DR2G by Onsemi is an Operational Amplifier with a max input offset voltage of 4000uV, ideal for automotive applications. It features a nominal common mode reject ratio of 80dB and a min voltage gain of 50000, making it suitable for precision signal processing in harsh environments. This Op Amp operates at temperatures ranging from -40 to 125 °C and has a max supply current of 1.7mA.

Median Price

$1.039

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 1,762 parts In-Stock

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Rochester

USA . 305 parts In-Stock

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-

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$1.020

1k+ parts

$0.847

10k+ parts

$0.755

305

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$1.020

$0.847

$0.755

Verical

USA . 305 parts In-Stock

1+ parts

-

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$1.058

10k+ parts

$0.944

305

-

-

$1.058

$0.944

Distributors (In-Stock)

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Vyrian

USA . 871 parts In-Stock

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$0.730

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871

$0.730

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Digiode

USA . 970 parts In-Stock

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$0.831

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970

$0.831

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Chip Stock

USA . 67,000 parts In-Stock

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Flip Electronics

USA . 1,762 parts In-Stock

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1,762

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,037 parts In-Stock

1+ parts

$0.620

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1,037

$0.620

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Corohmni

South Africa . 405 parts In-Stock

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$0.730

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405

$0.730

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Corphita

USA . 823 parts In-Stock

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$0.788

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823

$0.788

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Vigor

Singapore . 139 parts In-Stock

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$0.840

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139

$0.840

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Component Stockers USA

USA . 368 parts In-Stock

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$0.890

100+ parts

$0.840

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368

$0.890

$0.840

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TANS Electronics

Latvia . 8,177 parts In-Stock

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SupplyDigital Components

Austria . 5,661 parts In-Stock

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Kulean Microsystems

USA . 5,589 parts In-Stock

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Perfect Parts

USA . 5,488 parts In-Stock

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Problanco Electronics

Mexico . 5,145 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 854 parts In-Stock

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Microchip USA

USA . 114 parts In-Stock

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Overview

Discover the NCV5230DR2G by Onsemi, a top-notch operational amplifier designed for automotive applications. With a wide temperature range, high voltage gain, and low bias current, this product ensures reliable performance in challenging environments. Manufactured by Onsemi, a trusted name in the industry, you can count on quality and excellence. Whether you need precision amplification or signal conditioning, this Op Amp delivers exceptional value, efficiency, and versatility. Trust the NCV5230DR2G to elevate your automotive electronic designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage ensures accuracy in signal processing and minimizes errors.

Surface Mount: YES

Surface mount option allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in reducing noise and interference in the output signal.

Maximum Supply Voltage Limit: 9 V

Operates within a safe voltage range, protecting the circuit from damage.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various applications.

Nominal Unity Gain Bandwidth: 0.25 kHz

High unity gain bandwidth ensures stable and accurate operation at different gain settings.

Technical Specifications

Operational Amplifiers (Op Amps) NCV5230DR2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

No

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

250 Hz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

50000

Nominal Slew Rate:

0.25 V/us

Maximum Input Offset Current (IIO):

100 nA

Peak Bias Current:

300 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Maximum Supply Voltage:

9 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.7 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

NCV5230DR2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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