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NCP59151MN33TYG

Onsemi

NCP59151MN33TYG by Onsemi

NCP59151MN33TYG by Onsemi is an adjustable positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.5A. It operates in a temperature range from -40 to 125 °C, making it suitable for various applications requiring stable voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

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AZTECH Wire

Italy . 545 parts In-Stock

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Overview

Looking for a reliable voltage regulator for your electronic devices? Look no further than the NCP59151MN33TYG by Onsemi. This adjustable positive single output LDO offers top-notch quality and performance, ensuring stable power supply for your applications. With Onsemi's reputation for excellence and innovation in technology, you can trust that this regulator will meet your needs with precision. Whether you're designing consumer electronics, industrial equipment, or automotive systems, this product provides the value, efficiency, and reliability you need to bring your projects to life. Trust Onsemi for all your voltage regulation needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the regulator, ensuring a longer lifespan.

Surface Mount: YES

Easy and convenient installation on PCBs, saving time and effort.

Operating Temperature (TJ-Max): 125 °C

Allows for stable performance even in high temperature environments.

Technology: CMOS

Efficient power management with low power consumption.

Nominal Output Voltage-1: 3.3 V

Provides a stable output voltage for various applications.

Maximum Output Current-1: 1.5 A

Capable of delivering sufficient current for powering different components.

Maximum Input Voltage Absolute: 18 V

Handles high input voltages, ensuring compatibility with a wide range of systems.

Technical Specifications

Adjustable Regulators - Positive Single Output LDO NCP59151MN33TYG attributes and parameters. Explore more Adjustable Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Nominal Dropout Voltage-1:

.3 V

Maximum Input Voltage Absolute:

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Maximum Line Regulation:

.0165 %

Maximum Load Regulation:

.033 %

Moisture Sensitivity Level (MSL):

1

No. of Outputs:

1

No. of Terminals:

8

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

1.5 A

Nominal Output Voltage-1:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.16,32

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Trade Compliance

NCP59151MN33TYG Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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