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NCP170BXV190T2G

Onsemi

NCP170BXV190T2G by Onsemi

NCP170BXV190T2G by Onsemi is a Fixed Positive Single Output LDO Regulator with 1.9V Nominal Output Voltage, 0.15A Max Output Current, and 1% Max Voltage Tolerance. It is ideal for applications requiring low dropout voltage and precise voltage regulation in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,764 parts In-Stock

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Digiode

USA . 237 parts In-Stock

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237

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Vigor

Singapore . 649 parts In-Stock

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$0.150

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649

$0.150

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AZTECH Wire

Italy . 285 parts In-Stock

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$21.400

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 3,278 parts In-Stock

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Kulean Microsystems

USA . 2,597 parts In-Stock

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TANS Electronics

Latvia . 997 parts In-Stock

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Corphita

USA . 608 parts In-Stock

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UHIMA Technologies

Türkiye . 516 parts In-Stock

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SupplyDigital Components

Austria . 495 parts In-Stock

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495

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Microchip USA

USA . 122 parts In-Stock

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Corohmni

South Africa . 58 parts In-Stock

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Overview

Enhance your electronic designs with the NCP170BXV190T2G by Onsemi, a top-quality fixed regulator that offers precise voltage regulation and reliable performance. Manufactured by Onsemi, a trusted name in the industry, this LDO regulator is ideal for a wide range of applications. With its small outline package, low dropout voltage, and high voltage tolerance, this product provides exceptional value and benefits to customers seeking efficient power management solutions. Upgrade your projects with the NCP170BXV190T2G and experience the advantages of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the regulator, ensuring long-lasting performance.

Maximum Dropout Voltage-1: 0.46 V

Low dropout voltage allows the regulator to operate efficiently even when the input voltage is close to the output voltage, maximizing power conversion efficiency.

Operating Temperature (TJ-Max): 85 °C

Wide operating temperature range allows the regulator to function reliably in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, making the regulator suitable for battery-powered applications.

Nominal Output Voltage-1: 1.9 V

Provides a stable and reliable output voltage for powering electronic components in a circuit.

Maximum Output Current-1: 0.15 A

Can deliver sufficient current to power a range of electronic devices and components.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP170BXV190T2G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.46 V

Nominal Dropout Voltage-1:

.335 V

Maximum Input Voltage Absolute:

6 V

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

2.5 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Length:

1.6 mm

Maximum Load Regulation:

.02 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

6

Operating Temperature (TJ-Max):

85 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.15 A

Maximum Output Voltage-1:

1.919 V

Minimum Output Voltage-1:

1.881 V

Nominal Output Voltage-1:

1.9 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.047,20

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.6 mm

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

1 %

Width:

1.2 mm

Trade Compliance

NCP170BXV190T2G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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