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NBRB8H100T4G

Onsemi

NBRB8H100T4G by Onsemi

NBRB8H100T4G by Onsemi is a Schottky rectifier diode with 100V max repetitive peak reverse voltage and 8A max output current. It operates b/w -65°C to 175°C, making it suitable for power applications. This single-configured diode has a max forward voltage of 0.71V and matte tin terminal finish for surface mount in small outline packages.

Median Price

$0.754

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 265 parts In-Stock

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-

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$0.754

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$0.626

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$0.558

265

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$0.754

$0.626

$0.558

Distributors (In-Stock)

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Digiode

USA . 963 parts In-Stock

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$0.615

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Nova Conductors

Japan . 500 parts In-Stock

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$0.918

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$0.918

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Chip Stock

USA . 63,000 parts In-Stock

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Vyrian

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 565 parts In-Stock

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$0.550

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$0.550

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Corphita

USA . 310 parts In-Stock

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$0.582

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$0.582

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Corohmni

South Africa . 272 parts In-Stock

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$0.647

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Continental Prestige Electronics

USA . 4,874 parts In-Stock

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$0.918

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$0.899

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$0.899

Argo Parts USA

USA . 1,671 parts In-Stock

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$0.918

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Netroflash

USA . 500 parts In-Stock

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$0.918

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AZTECH Wire

Italy . 234 parts In-Stock

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$5.435

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$5.435

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Andel Nordic

Denmark . 1,778 parts In-Stock

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$6.769

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$6.499

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$6.499

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$6.499

Infinite Electronics LLP (Excess)

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 5,642 parts In-Stock

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Kepictronics

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Lixinc

USA . 5,477 parts In-Stock

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SupplyDigital Components

Austria . 4,985 parts In-Stock

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Kulean Microsystems

USA . 3,928 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Overview

Discover the NBRB8H100T4G by Onsemi, a high-quality SCHOTTKY RECTIFIER DIODE that offers exceptional performance in power applications. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 100V, this diode ensures reliable operation even in demanding conditions. Manufactured by Onsemi, a trusted name in the industry, this product guarantees top-notch quality and durability. Whether you're looking to enhance the efficiency of your power systems or improve overall performance, the NBRB8H100T4G is the perfect solution for your needs. Experience the value and benefits of this exceptional diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, making the product durable and reliable.

Config: SINGLE

Simplifies circuit design and installation.

Surface Mount: YES

Enables easy and space-efficient PCB mounting.

Maximum Reverse Current: 4.5 uA

Ensures minimal power loss in the reverse direction.

Package Shape: RECTANGULAR

Facilitates easy placement and routing on the PCB.

No. of Terminals: 2

Simplifies the connection and integration of the diode in the circuit.

Package Style (Meter): SMALL OUTLINE

Offers a compact form factor suitable for various applications.

Application: POWER

Designed for power applications, ensuring efficient energy conversion.

Maximum Operating Temperature: 175 °C

Suitable for high-temperature environments, enhancing product reliability.

Minimum Operating Temperature: -65 °C

Allows for operation in extreme cold conditions.

Terminal Finish: MATTE TIN

Provides a good contact surface for reliable connections.

Terminal Position: SINGLE

Simplifies the installation process and reduces the chance of errors.

Case Connection: CATHODE

Clearly indicates the polarity for proper installation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Allows for a reliable soldering process with high-temperature tolerance.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.71 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 8 A

Suitable for high-current applications, providing reliable performance.

Technology: SCHOTTKY

Schottky diodes have fast switching speed and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: GULL WING

Facilitates easy and secure PCB mounting during assembly.

Maximum Repetitive Peak Reverse Voltage: 100 V

Handles high reverse voltages, making it suitable for various power supply designs.

Maximum Non Repetitive Peak Forward Current: 250 A

Can handle high peak currents without damage, increasing product reliability.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NBRB8H100T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

4.5 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NBRB8H100T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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