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MUR810G

Onsemi

MUR810G by Onsemi

MUR810G by Onsemi is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max output current of 8A. It operates in temperatures ranging from -65°C to 175°C, making it suitable for applications requiring high-speed switching and efficient power management.

Median Price

$0.842

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 63 parts In-Stock

1+ parts

$0.150

100+ parts

$0.137

1k+ parts

$0.123

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63

$0.150

$0.137

$0.123

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Farnell

UK . 75 parts In-Stock

1+ parts

$0.766

100+ parts

$0.540

1k+ parts

$0.511

10k+ parts

$0.509

75

$0.766

$0.540

$0.511

$0.509

Chip1Stop

Japan . 250 parts In-Stock

1+ parts

$0.842

100+ parts

$0.701

1k+ parts

-

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250

$0.842

$0.701

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Mouser Electronics

USA . 945 parts In-Stock

1+ parts

$0.900

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945

$0.900

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DigiKey

USA . 209 parts In-Stock

1+ parts

$0.910

100+ parts

$0.620

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$0.521

10k+ parts

$0.517

209

$0.910

$0.620

$0.521

$0.517

Newark

USA . 75 parts In-Stock

1+ parts

$1.140

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75

$1.140

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Element14

Singapore . 75 parts In-Stock

1+ parts

$1.290

100+ parts

$0.907

1k+ parts

$0.855

10k+ parts

$0.838

75

$1.290

$0.907

$0.855

$0.838

Avnet

USA . 6,500 parts In-Stock

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6,500

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Verical

USA . 1,250 parts In-Stock

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-

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$0.769

1k+ parts

$0.732

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1,250

-

$0.769

$0.732

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Master Electronics

USA . 1,250 parts In-Stock

1+ parts

-

100+ parts

$0.654

1k+ parts

$0.622

10k+ parts

$0.609

1,250

-

$0.654

$0.622

$0.609

Arrow

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$0.513

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200

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$0.513

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Rochester

USA . 67 parts In-Stock

1+ parts

-

100+ parts

$1.370

1k+ parts

$1.140

10k+ parts

$1.010

67

-

$1.370

$1.140

$1.010

Distributors (In-Stock)

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Digiode

USA . 1,295 parts In-Stock

1+ parts

$0.142

100+ parts

-

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1,295

$0.142

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.657

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100

$0.657

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Vyrian

USA . 8,946 parts In-Stock

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8,946

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IBS Electronics

USA . 1,750 parts In-Stock

1+ parts

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100+ parts

$0.827

1k+ parts

$0.799

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1,750

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$0.827

$0.799

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ComSIT Distribution GmbH

Germany . 1,580 parts In-Stock

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1,580

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Sea View Technologies

USA . 668 parts In-Stock

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668

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Bristol Electronics

USA . 668 parts In-Stock

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668

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NAC Semi

USA . 400 parts In-Stock

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$1.070

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400

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$1.070

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Microfarads

USA . 92 parts In-Stock

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92

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Distributors (Availability)

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Ampacity Inc.

Singapore . 504 parts In-Stock

1+ parts

$0.128

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504

$0.128

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Corphita

USA . 297 parts In-Stock

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$0.135

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297

$0.135

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Corohmni

South Africa . 101 parts In-Stock

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$0.150

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101

$0.150

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Advanced Electronics

New Zealand . 63 parts In-Stock

1+ parts

$0.150

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$0.137

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$0.123

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63

$0.150

$0.137

$0.123

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Aztec Data Supply Inc.

USA . 3,669 parts In-Stock

1+ parts

$0.173

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3,669

$0.173

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Argo Parts USA

USA . 4,163 parts In-Stock

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$0.657

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$0.637

4,163

$0.657

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$0.637

Continental Prestige Electronics

USA . 959 parts In-Stock

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$0.657

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$0.644

959

$0.657

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$0.644

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.657

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$0.644

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500

$0.657

$0.644

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Microchip USA

USA . 7,713 parts In-Stock

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Kulean Microsystems

USA . 4,406 parts In-Stock

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SupplyDigital Components

Austria . 4,170 parts In-Stock

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Perfect Parts

USA . 4,115 parts In-Stock

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TANS Electronics

Latvia . 935 parts In-Stock

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935

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UHIMA Technologies

Türkiye . 815 parts In-Stock

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815

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Problanco Electronics

Mexico . 88 parts In-Stock

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88

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Overview

Discover the MUR810G by Onsemi, a high-quality rectifier diode perfect for ultra fast recovery power applications. With a maximum output current of 8 A and a maximum reverse voltage of 100 V, this diode offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, you can trust in the durability and efficiency of this product. Whether you're working on power supplies, inverters, or motor drives, the MUR810G is sure to deliver the value and benefits you need for your projects. Upgrade to the MUR810G today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring durability and reliability.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast reverse recovery time allows for efficient operation and reduces power loss in the circuit.

Application: ULTRA FAST RECOVERY POWER

Suitable for applications requiring high-speed switching and efficient power delivery.

Maximum Operating Temperature: 175 °C

Can operate efficiently in a wide range of temperatures, making it versatile for different environments.

Maximum Repetitive Peak Reverse Voltage: 100 V

Capable of handling high peak reverse voltages, providing protection to the circuit.

Technical Specifications

Diodes & Rectifiers MUR810G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR810G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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