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MUR805G

Onsemi

MUR805G by Onsemi

MUR805G by Onsemi is a single rectifier diode with ultra-fast recovery power, featuring a max forward voltage of 0.975V and output current of 8A. It operates in temperatures ranging from -65°C to 175°C, making it suitable for applications requiring high-speed switching capabilities. The diode has a max repetitive peak reverse voltage of 50V and non-repetitive peak forward current of 100A, housed in a rectangular flange mount package style.

Median Price

$0.546

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,981 parts In-Stock

1+ parts

-

100+ parts

$0.536

1k+ parts

$0.445

10k+ parts

$0.397

13,981

-

$0.536

$0.445

$0.397

Verical

USA . 4,100 parts In-Stock

1+ parts

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$0.556

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4,100

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$0.556

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Flip Electronics (Authorized)

USA . 600 parts In-Stock

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600

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Avnet

USA . 290 parts In-Stock

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290

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Digiode

USA . 1,820 parts In-Stock

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$0.418

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1,820

$0.418

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Vyrian

USA . 6,785 parts In-Stock

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6,785

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Flip Electronics

USA . 600 parts In-Stock

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600

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,874 parts In-Stock

1+ parts

$0.293

100+ parts

-

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9,874

$0.293

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Corohmni

South Africa . 67 parts In-Stock

1+ parts

$0.345

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67

$0.345

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Corphita

USA . 1,329 parts In-Stock

1+ parts

$0.396

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1,329

$0.396

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Component Stockers USA

USA . 19,789 parts In-Stock

1+ parts

$0.450

100+ parts

$0.420

1k+ parts

$0.380

10k+ parts

$0.380

19,789

$0.450

$0.420

$0.380

$0.380

AZTECH Wire

Italy . 768 parts In-Stock

1+ parts

$17.150

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768

$17.150

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Continental Prestige Electronics

USA . 15,270 parts In-Stock

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$0.425

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$0.425

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 7,274 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Kulean Microsystems

USA . 2,564 parts In-Stock

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2,564

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SupplyDigital Components

Austria . 2,222 parts In-Stock

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Perfect Parts

USA . 1,785 parts In-Stock

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1,785

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Problanco Electronics

Mexico . 1,477 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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iodParts Technologies Inc.

India . 350 parts In-Stock

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350

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UHIMA Technologies

Türkiye . 328 parts In-Stock

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328

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Overview

Discover the power of the MUR805G by Onsemi, a premium diode rectifier that sets the standard for ultra-fast recovery power applications. With top-notch quality and reliability from a trusted manufacturer, this single-configured diode offers maximum performance with a forward voltage of just 0.975V and an output current of 8A. Perfect for a range of electronic projects, the MUR805G provides superior efficiency and durability, making it an essential component for any design. Elevate your projects with the unparalleled value and benefits of the MUR805G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the diode, ensuring reliability and durability in various operating conditions.

Maximum Reverse Recovery Time: 0.035 us

The ultra fast reverse recovery time of 0.035 microseconds allows for quick switching and efficient operation of the diode, making it suitable for high-speed applications.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra fast recovery power applications, this diode is capable of handling high power levels with minimal losses, making it ideal for energy-efficient systems.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this diode can withstand elevated temperatures without compromising its performance, ensuring stability in demanding environments.

Maximum Repetitive Peak Reverse Voltage: 50 V

The diode's maximum repetitive peak reverse voltage of 50V allows it to handle high voltage levels safely, making it suitable for a wide range of applications requiring voltage regulation and protection.

Technical Specifications

Diodes & Rectifiers MUR805G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR805G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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