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MUR1610CTR

Onsemi

MUR1610CTR by Onsemi

MUR1610CTR by Onsemi is a diode with 100V peak reverse voltage, 0.085us reverse recovery time, and 500uA reverse current. It operates b/w -65 °C to 175°C, with a max forward voltage of 0.98V. Ideal for applications requiring fast switching and low power loss in various electronic circuits.

Median Price

$0.644

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

MUR1610CTR by Onsemi
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 53,350 parts In-Stock

1+ parts

-

100+ parts

$0.621

1k+ parts

$0.515

10k+ parts

$0.459

53,350

-

$0.621

$0.515

$0.459

DigiKey

USA . 53,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.780

10k+ parts

-

53,350

-

-

$0.780

-

Verical

USA . 53,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.644

10k+ parts

$0.574

53,350

-

-

$0.644

$0.574

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 444 parts In-Stock

1+ parts

$0.484

100+ parts

-

1k+ parts

-

10k+ parts

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444

$0.484

-

-

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Vyrian

USA . 2,249 parts In-Stock

1+ parts

$0.509

100+ parts

-

1k+ parts

-

10k+ parts

-

2,249

$0.509

-

-

-

Bristol Electronics

USA . 380 parts In-Stock

1+ parts

-

100+ parts

$0.422

1k+ parts

$0.360

10k+ parts

-

380

-

$0.422

$0.360

-

DigiKey Marketplace

USA . 50 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,385 parts In-Stock

1+ parts

$0.458

100+ parts

-

1k+ parts

-

10k+ parts

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1,385

$0.458

-

-

-

Corohmni

South Africa . 430 parts In-Stock

1+ parts

$0.509

100+ parts

-

1k+ parts

-

10k+ parts

-

430

$0.509

-

-

-

Component Stockers USA

USA . 54,433 parts In-Stock

1+ parts

$0.530

100+ parts

$0.500

1k+ parts

$0.450

10k+ parts

$0.450

54,433

$0.530

$0.500

$0.450

$0.450

TANS Electronics

Latvia . 6,538 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,538

-

-

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Problanco Electronics

Mexico . 5,560 parts In-Stock

1+ parts

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5,560

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Kulean Microsystems

USA . 5,074 parts In-Stock

1+ parts

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5,074

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SupplyDigital Components

Austria . 403 parts In-Stock

1+ parts

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403

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UHIMA Technologies

Türkiye . 267 parts In-Stock

1+ parts

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267

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Kepictronics

USA . 100 parts In-Stock

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100+ parts

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1k+ parts

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100

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Continental Prestige Electronics

USA . 50 parts In-Stock

1+ parts

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100+ parts

$0.571

1k+ parts

-

10k+ parts

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50

-

$0.571

-

-

Overview

Experience the superior quality and reliability of the MUR1610CTR diode by Onsemi. With a maximum reverse recovery time of 0.085 us and a maximum repetitive peak reverse voltage of 100 V, this diode is perfect for a wide range of applications. From power supplies to motor drives, this diode offers exceptional performance and efficiency. Trust in Onsemi's reputation for excellence and choose the MUR1610CTR for your next project.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.085 us

This diode has a very fast reverse recovery time, making it suitable for high frequency applications where a quick response is needed.

Maximum Reverse Current: 500 uA

With a low reverse current, this diode offers efficient operation and helps in minimizing power losses.

Maximum Operating Temperature: 175 °C

The diode can operate at high temperatures without getting damaged, making it suitable for applications where elevated temperatures are present.

Minimum Operating Temperature: -65 °C

This diode can also function at very low temperatures, allowing for a wider range of operating conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and electrical conductivity, ensuring secure connections and reliable performance.

Maximum Forward Voltage (VF): 0.98 V

The low forward voltage drop of this diode helps in reducing power dissipation and improving efficiency in circuits.

Maximum Repetitive Peak Reverse Voltage: 100 V

This diode can handle high peak reverse voltages, making it suitable for applications where voltage surges or spikes may occur.

Technical Specifications

Other Function Diodes MUR1610CTR attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.98 V

JESD-609 Code:

e0

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

500 uA

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

MUR1610CTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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