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MUN2213JT1G

Onsemi

MUN2213JT1G by Onsemi

MUN2213JT1G by Onsemi is a NPN pre-biased transistor with max collector current of 100mA and breakdown voltage of 50V. With hFE of 80 @ 5mA, it offers low Vce saturation at 250mV. Ideal for surface mount applications in discrete semiconductor products requiring single bipolar transistors.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

MUN2213JT1G by Onsemi
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

66,000

-

$0.030

$0.025

$0.023

Verical

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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66,000

-

-

-

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Distributors (In-Stock)

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Digiode

USA . 1,471 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

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1,471

$0.024

-

-

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Vyrian

USA . 6,381 parts In-Stock

1+ parts

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1k+ parts

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6,381

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 65,824 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

10k+ parts

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65,824

$0.021

-

-

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Corphita

USA . 1,628 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

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1,628

$0.022

-

-

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Corohmni

South Africa . 203 parts In-Stock

1+ parts

$0.025

100+ parts

-

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203

$0.025

-

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AZTECH Wire

Italy . 212 parts In-Stock

1+ parts

$17.250

100+ parts

-

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212

$17.250

-

-

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Continental Prestige Electronics

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.021

66,000

-

-

-

$0.021

TANS Electronics

Latvia . 8,151 parts In-Stock

1+ parts

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8,151

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QUARKTWIN TECHNOLOGY LTD

USA . 7,398 parts In-Stock

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7,398

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SupplyDigital Components

Austria . 7,305 parts In-Stock

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7,305

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Kulean Microsystems

USA . 4,445 parts In-Stock

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4,445

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UHIMA Technologies

Türkiye . 974 parts In-Stock

1+ parts

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974

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Problanco Electronics

Mexico . 939 parts In-Stock

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939

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Overview

Discover the unparalleled quality and reliability of the MUN2213JT1G by Onsemi, a leading manufacturer in the industry. With its innovative design and top-notch performance, this NPN pre-biased bipolar transistor offers a wide range of applications in the realm of discrete semiconductor products. From amplification to switching, this product is guaranteed to deliver exceptional results. Elevate your projects with ease and efficiency, thanks to the high current collector, low Vce saturation, and compact surface mount packaging. Trust in Onsemi to provide superior products that exceed expectations and elevate your work to new heights.

Feature Benefit Bullets

Standard Package: 3,000

This product comes in a standard package of 3,000 units, making it convenient for bulk orders and ensuring continuity of supply.

Transistor Type: NPN - Pre-Biased

The NPN transistor type with pre-biasing simplifies circuit design and ensures easy integration into various electronic applications.

Current - Collector (Ic) (Max): 100 mA

With a maximum collector current of 100 mA, this transistor can handle moderate current loads effectively.

Voltage - Collector Emitter Breakdown (Max): 50 V

The high breakdown voltage of 50 V ensures reliable performance and protection against voltage spikes in the circuit.

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V

The high DC current gain of 80 ensures amplification of the input signal with minimal distortion, making it suitable for signal processing applications.

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA

The low saturation voltage of 250mV ensures efficient switching and minimal power loss, making it energy-efficient.

Power - Max: 338 mW

With a maximum power dissipation of 338 mW, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Mounting Type: Surface Mount

The surface mount design allows for easy installation on PCBs, saving space and facilitating automated assembly processes.

Package / Case: TO-236-3, SC-59, SOT-23-3

The TO-236-3, SC-59, SOT-23-3 package offers versatility in mounting options, making it compatible with various electronic designs.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

The MSL rating of 1 indicates that this product can withstand multiple reflow soldering cycles, ensuring robustness in manufacturing processes.

Technical Specifications

Additional Parts MUN2213JT1G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

ONSONSMUN2213JT1G
2156-MUN2213JT1G

Category:

Discrete Semiconductor Products
Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max):

100 mA

Resistor - Base (R1):

47 kOhms

Vce Saturation (Max) @ Ib, Ic:

250mV @ 300µA, 10mA

Mounting Type:

Surface Mount

Voltage - Collector Emitter Breakdown (Max):

50 V

Supplier Device Package:

SC-59

Standard Package:

3,000

Transistor Type:

NPN - Pre-Biased

Package / Case:

TO-236-3, SC-59, SOT-23-3

Power - Max:

338 mW

Packaging:

Tape & Reel (TR)

Resistor - Emitter Base (R2):

47 kOhms

Current - Collector Cutoff (Max):

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 5mA, 10V

Base Product Number:

MUN2213

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MUN2213JT1G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.21.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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