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MUN2211JT1

Onsemi

MUN2211JT1 by Onsemi

MUN2211JT1 by Onsemi is a NPN pre-biased transistor with max collector current of 100mA and breakdown voltage of 50V. With hFE of 35 @ 5mA, it's ideal for low-power applications in surface mount packages like TO-236-3 and SOT-23-3.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

MUN2211JT1 by Onsemi
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

36,000

-

$0.030

$0.025

$0.023

Farnell

UK . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36,000

-

-

-

-

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,485 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

1,485

$0.024

-

-

-

Vyrian

USA . 2,421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,421

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 696 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

696

$0.022

-

-

-

Corohmni

South Africa . 323 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

323

$0.025

-

-

-

Component Stockers USA

USA . 27,355 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

27,355

$0.030

$0.020

$0.020

$0.020

AZTECH Wire

Italy . 766 parts In-Stock

1+ parts

$21.300

100+ parts

-

1k+ parts

-

10k+ parts

-

766

$21.300

-

-

-

Continental Prestige Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.021

36,000

-

-

-

$0.021

Problanco Electronics

Mexico . 8,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,339

-

-

-

-

TANS Electronics

Latvia . 6,898 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,898

-

-

-

-

Kulean Microsystems

USA . 5,433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,433

-

-

-

-

Advanced Electronics

New Zealand . 3,384 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,384

-

-

-

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SupplyDigital Components

Austria . 1,038 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,038

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-

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UHIMA Technologies

Türkiye . 412 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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412

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Overview

Discover the MUN2211JT1 by Onsemi, a high-quality NPN pre-biased bipolar transistor that offers unparalleled performance in various applications. Manufactured by Onsemi, known for their reliability and innovation, this product provides customers with exceptional value and benefits. With a maximum collector current of 100mA and a breakdown voltage of 50V, this transistor is perfect for amplification and switching tasks. Experience the advantages of the MUN2211JT1 in your projects today!

Feature Benefit Bullets

Standard Package: 3,000

Ideal for bulk purchasing and stocking up on inventory.

Packaging: Tape & Reel (TR)

Convenient packaging for automated assembly processes.

Current - Collector (Ic) (Max): 100 mA

High maximum collector current for various applications.

Voltage - Collector Emitter Breakdown (Max): 50 V

Suitable for low to medium voltage circuits.

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V

Consistent current gain at specified values for stable operation.

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA

Low saturation voltage for efficient switching.

Power - Max: 230 mW

Adequate power handling capability for many applications.

Mounting Type: Surface Mount

Ease of installation on PCBs for compact designs.

Package / Case: TO-236-3, SC-59, SOT-23-3

Versatile package options for different mounting preferences.

Technical Specifications

Additional Parts MUN2211JT1 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

2156-MUN2211JT1
ONSONSMUN2211JT1

Category:

Discrete Semiconductor Products
Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max):

100 mA

Resistor - Base (R1):

10 kOhms

Vce Saturation (Max) @ Ib, Ic:

250mV @ 300µA, 10mA

Mounting Type:

Surface Mount

Voltage - Collector Emitter Breakdown (Max):

50 V

Supplier Device Package:

SC-59

Standard Package:

3,000

Transistor Type:

NPN - Pre-Biased

Package / Case:

TO-236-3, SC-59, SOT-23-3

Power - Max:

230 mW

Packaging:

Tape & Reel (TR)

Resistor - Emitter Base (R2):

10 kOhms

Current - Collector Cutoff (Max):

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

35 @ 5mA, 10V

Base Product Number:

MUN2211

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MUN2211JT1 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.21.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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