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MSR1560

Onsemi

MSR1560 by Onsemi

The Onsemi MSR1560 is a single rectifier diode with a max output current of 15A and peak repetitive reverse voltage of 600V. It has a fast reverse recovery time of 0.045us, making it ideal for soft recovery power applications at temperatures up to 150 °C. The diode's package style is flange mount with a rectangular shape and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,035 parts In-Stock

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Digiode

USA . 553 parts In-Stock

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AZTECH Wire

Italy . 239 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 8,188 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,397 parts In-Stock

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Problanco Electronics

Mexico . 6,274 parts In-Stock

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Kulean Microsystems

USA . 4,840 parts In-Stock

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Corphita

USA . 2,472 parts In-Stock

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TANS Electronics

Latvia . 1,103 parts In-Stock

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Assy Fe

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Corohmni

South Africa . 117 parts In-Stock

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UHIMA Technologies

Türkiye . 98 parts In-Stock

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Overview

Unlock the power of reliable and efficient soft recovery power with the MSR1560 diode rectifier from Onsemi. Crafted with precision and quality, this single-configured diode offers a maximum reverse recovery time of just 0.045 us, ensuring seamless operation in a wide range of applications. With a maximum output current of 15 A and a maximum repetitive peak reverse voltage of 600 V, this diode is a game-changer for your electronic projects. Trust in Onsemi's expertise and elevate your designs with the MSR1560 diode rectifier today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring reliable performance and durability.

Maximum Reverse Recovery Time: 0.045 us

The low reverse recovery time helps in reducing switching losses and improving efficiency in power applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature limit, this diode can withstand heat and operate efficiently in demanding environments.

Maximum Output Current: 15 A

The high output current rating makes this diode suitable for applications requiring high power handling capability.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high reverse voltage rating ensures that this diode can handle high voltage spikes and fluctuations without breakdown.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, making them a popular choice for rectification and power conversion applications.

Technical Specifications

Diodes & Rectifiers MSR1560 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

SOFT RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.4 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.045 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSR1560 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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