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MPTE-010

Onsemi

MPTE-010 by Onsemi

The Onsemi MPTE-010 TVS diode from the Mosorb™ series has a reverse standoff voltage of 10V, breakdown voltage of 11.7V, and clamping voltage of 16.7V. With a peak pulse current of 90A and power rating of 1500W, it is ideal for circuit protection in applications requiring transient voltage suppression. Operating temperature range is -65 °C to 175°C with through-hole mounting in DO-201AD package.

Median Price

$0.387

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.436

1k+ parts

$0.362

10k+ parts

$0.323

500

-

$0.436

$0.362

$0.323

Farnell

UK . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.338

10k+ parts

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500

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-

$0.338

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Distributors (In-Stock)

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Digiode

USA . 838 parts In-Stock

1+ parts

$0.339

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838

$0.339

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Vyrian

USA . 8,197 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,203 parts In-Stock

1+ parts

$0.321

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$0.321

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Corohmni

South Africa . 207 parts In-Stock

1+ parts

$0.338

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207

$0.338

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AZTECH Wire

Italy . 1,161 parts In-Stock

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$11.310

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$11.310

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SupplyDigital Components

Austria . 8,016 parts In-Stock

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8,016

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Kulean Microsystems

USA . 7,114 parts In-Stock

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Problanco Electronics

Mexico . 4,425 parts In-Stock

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TANS Electronics

Latvia . 3,862 parts In-Stock

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UHIMA Technologies

Türkiye . 595 parts In-Stock

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Continental Prestige Electronics

USA . 500 parts In-Stock

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100+ parts

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$0.306

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500

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$0.306

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Overview

Enhance your circuit protection with the MPTE-010 by Onsemi. Manufactured with the highest quality standards, this TVS diode from the Mosorb™ series offers unmatched reliability and performance. Ideal for a wide range of applications, this Zener type diode provides a reverse standoff voltage of 10V and clamping voltage of 16.7V. With a peak pulse current of 90A and power rating of 1500W, the MPTE-010 ensures superior transient voltage suppression. Trust Onsemi to deliver exceptional quality and value with every product, making it the perfect choice for all your circuit protection needs.

Feature Benefit Bullets

Other Names: 2156-MPTE-010

This specific part number helps in easily identifying and ordering the correct TVS diode component.

Standard Package: 500

Being available in a bulk package of 500 units makes it convenient for manufacturers requiring a large quantity of TVS diodes for their production runs.

Type: Zener

Zener diodes are known for their precise voltage regulation and protection capabilities, making this TVS diode a reliable choice for circuit protection applications.

Voltage - Breakdown (Min): 11.7V

With a minimum breakdown voltage of 11.7V, this TVS diode provides effective protection against voltage spikes and transients in the circuit.

Power - Peak Pulse: 1500W (1.5kW)

The high peak pulse power rating of 1500W ensures that this TVS diode can effectively handle transient surge events without being damaged.

Operating Temperature: -65 °C ~ 175°C (TJ)

With a wide operating temperature range of -65 °C to 175°C, this TVS diode can be used in a variety of environments and applications without compromising its performance.

Mounting Type: Through Hole

The through-hole mounting type offers a secure and stable connection, ensuring the TVS diode remains in place during operation, making it suitable for industrial and automotive applications.

Technical Specifications

Additional Parts MPTE-010 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

2156-MPTE-010
ONSONSMPTE-010

Operating Temperature:

-65°C ~ 175°C (TJ)

Current - Peak Pulse (10/1000µs):

90A (8/20µs)

Category:

Circuit Protection
Transient Voltage Suppressors (TVS) TVS Diodes

Applications:

General Purpose

Voltage - Breakdown (Min):

11.7V

Mounting Type:

Through Hole

Power - Peak Pulse:

1500W (1.5kW)

Supplier Device Package:

Axial

Standard Package:

500

Series:

Mosorb™

Type:

Zener

Voltage - Clamping (Max) @ Ipp:

16.7V

Package / Case:

DO-201AD, Axial

Voltage - Reverse Standoff (Typ):

10V

Unidirectional Channels:

1

Package:

Bulk

Power Line Protection:

No

Base Product Number:

MPTE

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

MPTE-010 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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