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MPTE-005G

Onsemi

MPTE-005G by Onsemi

MPTE-005G by Onsemi is a Zener TVS diode with 5V reverse standoff voltage, 6V breakdown voltage, and 9.4V clamping voltage. It offers peak pulse current of 160A and power of 1500W. Ideal for circuit protection in applications requiring transient voltage suppression such as automotive electronics and industrial equipment.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 166 parts In-Stock

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$0.225

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$0.186

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$0.166

166

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$0.166

Distributors (In-Stock)

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Digiode

USA . 720 parts In-Stock

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$0.175

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Vyrian

USA . 4,011 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 467 parts In-Stock

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$0.166

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467

$0.166

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Corohmni

South Africa . 274 parts In-Stock

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$0.184

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274

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Component Stockers USA

USA . 172 parts In-Stock

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$0.190

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$0.180

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172

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$0.180

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AZTECH Wire

Italy . 1,053 parts In-Stock

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$8.020

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$8.020

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Problanco Electronics

Mexico . 5,041 parts In-Stock

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SupplyDigital Components

Austria . 3,001 parts In-Stock

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TANS Electronics

Latvia . 1,244 parts In-Stock

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Kulean Microsystems

USA . 896 parts In-Stock

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UHIMA Technologies

Türkiye . 590 parts In-Stock

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Overview

Protect your electronic devices with the MPTE-005G by Onsemi. As a leading manufacturer in circuit protection, Onsemi delivers quality and reliability in every product. The MPTE-005G is a Zener type TVS diode from the Mosorb™ series, offering a reverse standoff voltage of 5V and clamping voltage of 9.4V. With a peak pulse current of 160A and peak power of 1500W, this TVS diode provides robust protection against transient voltage spikes. Ideal for a wide range of applications, the MPTE-005G ensures peace of mind for your valuable electronics.

Feature Benefit Bullets

Standard Package: 500

Buying in bulk allows for cost savings and ensures you have an adequate supply on hand for future projects.

Category: Circuit Protection - Transient Voltage Suppressors (TVS)

TVS diodes help protect sensitive electronic components from voltage spikes and transient events, ensuring the longevity of your circuit.

Type: Zener

Zener diodes provide precise voltage regulation and protection, making them suitable for a variety of applications.

Voltage - Breakdown (Min): 6V

With a minimum breakdown voltage of 6V, this TVS diode offers reliable protection against overvoltage conditions.

Power - Peak Pulse: 1500W (1.5kW)

The high peak pulse power rating of 1500W ensures that this TVS diode can handle large transient events without failing, providing robust protection for your circuit.

Operating Temperature: -65 °C ~ 175°C

With a wide operating temperature range of -65 °C to 175°C, this TVS diode is suitable for use in harsh environmental conditions.

Mounting Type: Through Hole

The through-hole mounting type makes it easy to install this TVS diode securely on your PCB, providing reliable protection against transient events.

Technical Specifications

Additional Parts MPTE-005G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Operating Temperature:

-65°C ~ 175°C (TJ)

Current - Peak Pulse (10/1000µs):

160A (8/20µs)

Category:

Circuit Protection
Transient Voltage Suppressors (TVS) TVS Diodes

Applications:

General Purpose

Voltage - Breakdown (Min):

6V

Mounting Type:

Through Hole

Power - Peak Pulse:

1500W (1.5kW)

Supplier Device Package:

Axial

Standard Package:

500

Series:

Mosorb™

Type:

Zener

Voltage - Clamping (Max) @ Ipp:

9.4V

Package / Case:

DO-201AD, Axial

Voltage - Reverse Standoff (Typ):

5V

Unidirectional Channels:

1

Packaging:

Bulk

Power Line Protection:

No

Base Product Number:

MPTE

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

MPTE-005G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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