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MPTE-005

Onsemi

MPTE-005 by Onsemi

The Onsemi MPTE-005 is a Zener TVS diode with 5V reverse standoff voltage, 6V breakdown voltage, and 9.4V clamping voltage. It offers peak pulse current of 160A and power of 1500W. Ideal for circuit protection in applications requiring transient voltage suppression such as automotive electronics and industrial equipment.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,349 parts In-Stock

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7,349

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Digiode

USA . 359 parts In-Stock

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359

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Distributors (Availability)

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AZTECH Wire

Italy . 624 parts In-Stock

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$8.220

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624

$8.220

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TANS Electronics

Latvia . 8,351 parts In-Stock

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8,351

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SupplyDigital Components

Austria . 7,073 parts In-Stock

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7,073

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Kulean Microsystems

USA . 6,715 parts In-Stock

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6,715

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Problanco Electronics

Mexico . 3,208 parts In-Stock

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UHIMA Technologies

Türkiye . 526 parts In-Stock

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526

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Corphita

USA . 291 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Enhance your circuit protection with the MPTE-005 by Onsemi. Designed with precision and reliability, this TVS diode from the Mosorb™ series offers superior performance in safeguarding your electronics against voltage transients. With a robust design capable of handling peak pulse currents up to 160A and peak power up to 1500W, the MPTE-005 is ideal for a wide range of applications. Trust in Onsemi's reputation for quality and innovation, and experience the peace of mind that comes with knowing your equipment is protected. Upgrade to the MPTE-005 today and ensure your devices are safe from harmful voltage spikes.

Feature Benefit Bullets

Standard Package: 500

Large quantity in each package allows for cost-effective purchasing and stocking.

Category: Circuit Protection, Transient Voltage Suppressors (TVS)

Designed specifically for protecting circuits from voltage surges and spikes, ensuring the safety of connected components.

Type: Zener

Zener diodes provide reliable voltage regulation and protection against over-voltage events.

Voltage - Reverse Standoff (Typ): 5V

Provides protection against reverse voltage polarity, preventing damage to the circuit.

Current - Peak Pulse (10/1000µs): 160A (8/20µs)

High peak pulse current rating ensures effective protection against transient voltage spikes.

Operating Temperature: -65 °C ~ 175°C (TJ)

Wide temperature range allows for use in various environments and applications.

Mounting Type: Through Hole

Easy and secure mounting on circuit boards for stability and reliability.

Technical Specifications

Additional Parts MPTE-005 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Operating Temperature:

-65°C ~ 175°C (TJ)

Current - Peak Pulse (10/1000µs):

160A (8/20µs)

Category:

Circuit Protection
Transient Voltage Suppressors (TVS) TVS Diodes

Applications:

General Purpose

Voltage - Breakdown (Min):

6V

Mounting Type:

Through Hole

Power - Peak Pulse:

1500W (1.5kW)

Supplier Device Package:

Axial

Standard Package:

500

Series:

Mosorb™

Type:

Zener

Voltage - Clamping (Max) @ Ipp:

9.4V

Package / Case:

DO-201AD, Axial

Voltage - Reverse Standoff (Typ):

5V

Unidirectional Channels:

1

Package:

Bulk

Power Line Protection:

No

Base Product Number:

MPTE

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

MPTE-005 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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