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MMSZ56T3G

Onsemi

MMSZ56T3G by Onsemi

MMSZ56T3G by Onsemi is a Zener diode with a 56V nominal reference voltage and 5% max voltage tolerance. It operates b/w -55 to 150 °C, has a max power dissipation of 0.5W, and features a surface mount package style for small outline applications.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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Flip Electronics

USA . 71,407 parts In-Stock

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Vyrian

USA . 3,074 parts In-Stock

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Digiode

USA . 118 parts In-Stock

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Ampacity Inc.

Singapore . 690 parts In-Stock

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$0.010

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$0.010

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Corohmni

South Africa . 317 parts In-Stock

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Argo Parts USA

USA . 4,010 parts In-Stock

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Continental Prestige Electronics

USA . 3,254 parts In-Stock

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$0.053

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Netroflash

USA . 500 parts In-Stock

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$0.050

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$0.049

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$0.053

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$0.049

Aztec Data Supply Inc.

USA . 3,111 parts In-Stock

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$0.158

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AZTECH Wire

Italy . 490 parts In-Stock

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TANS Electronics

Latvia . 6,166 parts In-Stock

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Problanco Electronics

Mexico . 6,155 parts In-Stock

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Kulean Microsystems

USA . 5,086 parts In-Stock

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SupplyDigital Components

Austria . 2,325 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Discover the high-quality MMSZ56T3G Zener Diode by Onsemi, designed to provide reliable voltage regulation in a compact package. Onsemi's reputation for excellence ensures that this diode offers superior performance and durability. Ideal for a wide range of applications, from power supplies to signal conditioning circuits, this Zener diode delivers precise voltage control with a nominal reference voltage of 56V. Experience the value and benefits of Onsemi's expertise with the MMSZ56T3G Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diode, ensuring a longer lifespan.

Working Test Current: 2 mA

Suitable for low power applications, making it energy efficient and cost-effective.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5 %

Provides stable and precise voltage regulation, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, making it versatile for various applications.

Maximum Dynamic Impedance: 200 ohm

Low impedance allows for efficient current flow, suitable for fast-switching applications.

Terminal Finish: MATTE TIN

Improves solderability and corrosion resistance for a reliable electrical connection.

Nominal Reference Voltage: 56 V

Provides a stable reference voltage for precise voltage regulation in electronic circuits.

Technology: ZENER

Zener diodes are specifically designed for voltage regulation and protection in electronic circuits.

Polarity: UNIDIRECTIONAL

Ensures that current flows in only one direction, preventing damage to sensitive components.

Technical Specifications

Zener Diodes MMSZ56T3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

200 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

56 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

2 mA

Trade Compliance

MMSZ56T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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