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MMSZ5262ET1

Onsemi

MMSZ5262ET1 by Onsemi

MMSZ5262ET1 by Onsemi is a Zener diode with 51V nominal reference voltage, 5% max voltage tolerance, and 125 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,220 parts In-Stock

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Digiode

USA . 2,292 parts In-Stock

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AZTECH Wire

Italy . 559 parts In-Stock

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$8.200

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559

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TANS Electronics

Latvia . 8,064 parts In-Stock

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SupplyDigital Components

Austria . 7,958 parts In-Stock

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Kulean Microsystems

USA . 7,706 parts In-Stock

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Corphita

USA . 1,416 parts In-Stock

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UHIMA Technologies

Türkiye . 702 parts In-Stock

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Corohmni

South Africa . 238 parts In-Stock

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Problanco Electronics

Mexico . 157 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MMSZ5262ET1 Zener Diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient components that meet the highest standards. This Zener diode is ideal for voltage regulation applications, providing stable and precise output voltages. With a compact design and excellent performance, this product offers exceptional value and benefits to customers looking for top-notch components for their projects. Experience the advantages of Onsemi's MMSZ5262ET1 and take your electronic designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, extending its lifespan.

Working Test Current: 2.5 mA

Ensures efficient and reliable performance under normal operating conditions.

Surface Mount: YES

Allows for easy and convenient mounting on a circuit board.

Maximum Voltage Tolerance: 5%

Provides a tight tolerance for voltage regulation, ensuring stability in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments without performance degradation.

Maximum Dynamic Impedance: 125 ohm

Helps in minimizing the variation in output voltage with changes in load current.

Terminal Finish: TIN LEAD

Facilitates good electrical contact and solderability.

Maximum Power Dissipation: 0.5 W

Can handle moderate power dissipation without overheating.

Nominal Reference Voltage: 51 V

Offers a precise and stable reference voltage for the circuit.

Technical Specifications

Zener Diodes MMSZ5262ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

125 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

51 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.5 mA

Trade Compliance

MMSZ5262ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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