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MMSZ5261BT3G

Onsemi

MMSZ5261BT3G by Onsemi

MMSZ5261BT3G by Onsemi is a Zener diode with 47V nominal reference voltage, 5% max voltage tolerance, and 105 ohm max dynamic impedance. It is a small outline, single-configured diode suitable for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,287 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,049 parts In-Stock

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$10.670

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Component Stockers USA

USA . 788 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 8,238 parts In-Stock

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Problanco Electronics

Mexico . 7,861 parts In-Stock

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TANS Electronics

Latvia . 7,648 parts In-Stock

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Kulean Microsystems

USA . 4,714 parts In-Stock

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SupplyDigital Components

Austria . 3,608 parts In-Stock

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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Corohmni

South Africa . 335 parts In-Stock

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Corphita

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Overview

Unlock the power of precision with the MMSZ5261BT3G by Onsemi, a top-tier Zener Diode that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this diode is designed for high-performance applications where accuracy is key. Whether you're working in telecommunications, automotive electronics, or industrial control systems, this diode delivers precise voltage regulation and protection. Trust in Onsemi's expertise and experience to provide you with a superior product that ensures optimal performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the diode light-weight and durable, suitable for various applications.

Working Test Current: 2.7 mA

The low working test current allows for efficient use of power and helps in minimizing energy consumption.

Surface Mount: YES

Being surface mountable makes the diode easy to install and saves space on the circuit board.

Maximum Voltage Tolerance: 5%

The 5% maximum voltage tolerance ensures stable and reliable performance in various voltage conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high-temperature environments without compromising performance.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation of 0.5 W allows the diode to handle power surges effectively and prevent overheating.

Technology: ZENER

Built on Zener technology, this diode provides precise voltage regulation and protection against voltage spikes.

Nominal Reference Voltage: 47 V

The nominal reference voltage of 47 V makes this diode suitable for applications requiring stable voltage output.

Technical Specifications

Zener Diodes MMSZ5261BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

105 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

47 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.7 mA

Trade Compliance

MMSZ5261BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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