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MMSZ5255ET1G

Onsemi

MMSZ5255ET1G by Onsemi

MMSZ5255ET1G by Onsemi is a Zener diode with 21V reverse test voltage, 4.5mA working current, and 600 ohm knee impedance. Ideal for voltage regulation in electronic circuits due to its small outline package and unidirectional polarity.

Median Price

$0.049

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

$0.051

1k+ parts

$0.042

10k+ parts

$0.038

54,000

-

$0.051

$0.042

$0.038

Verical

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.047

54,000

-

-

-

$0.047

Distributors (In-Stock)

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Digiode

USA . 2,165 parts In-Stock

1+ parts

$0.040

100+ parts

-

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2,165

$0.040

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.058

100+ parts

-

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10

$0.058

-

-

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Vyrian

USA . 7,705 parts In-Stock

1+ parts

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7,705

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Distributors (Availability)

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Ampacity Inc.

Singapore . 53,645 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

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53,645

$0.036

-

-

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Corphita

USA . 83 parts In-Stock

1+ parts

$0.038

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83

$0.038

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Corohmni

South Africa . 216 parts In-Stock

1+ parts

$0.042

100+ parts

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216

$0.042

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AZTECH Wire

Italy . 385 parts In-Stock

1+ parts

$14.460

100+ parts

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385

$14.460

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Continental Prestige Electronics

USA . 54,000 parts In-Stock

1+ parts

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100+ parts

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$0.050

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54,000

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$0.050

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TANS Electronics

Latvia . 5,878 parts In-Stock

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5,878

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Kulean Microsystems

USA . 4,273 parts In-Stock

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4,273

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SupplyDigital Components

Austria . 3,163 parts In-Stock

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3,163

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UHIMA Technologies

Türkiye . 662 parts In-Stock

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662

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Problanco Electronics

Mexico . 509 parts In-Stock

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509

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Overview

Discover the exceptional MMSZ5255ET1G Zener Diode by Onsemi, a top-notch manufacturer known for producing high-quality components. Perfect for a wide range of applications, this diode offers reliable performance and precise voltage regulation. With a maximum reverse voltage of 21V and a nominal reference voltage of 28V, this diode ensures stable operation in various electronic circuits. Experience the value and benefits of this product, from its small outline package style to its low power dissipation and excellent temperature range. Trust Onsemi for superior quality components that deliver unparalleled performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it user-friendly for electronic projects.

Working Test Current: 4.5 mA

With a moderate working current, this diode is suitable for low-power applications while ensuring optimal performance.

Surface Mount: YES

The surface mount feature allows for easy integration onto circuit boards, saving space and increasing efficiency.

Maximum Reverse Current: 0.1 uA

The low reverse current minimizes power loss and enhances the overall efficiency of the diode in operation.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and soldering onto PCBs, contributing to a streamlined assembly process.

Reverse Test Voltage: 21 V

The high reverse test voltage rating ensures reliable protection against reverse voltage conditions in the circuit.

No. of Terminals: 2

With only two terminals, this diode simplifies circuit connections and reduces the risk of wiring errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting, ideal for compact electronic devices.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent performance and accuracy in voltage regulation applications.

Maximum Knee Impedance: 600 ohm

The low knee impedance enhances the diode's responsiveness to voltage fluctuations, ensuring stable operation.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this diode can withstand challenging environmental conditions.

Maximum Dynamic Impedance: 44 ohm

The low dynamic impedance minimizes the voltage variation across the diode, ensuring steady performance.

Minimum Operating Temperature: -55 °C

The wide temperature range allows this diode to function reliably in both extreme heat and cold conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures consistent electrical conductivity for reliable performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for versatile mounting orientations.

Maximum Power Dissipation: 0.5 W

This diode can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Time At Peak Reflow Temperature (s): 30

The extended reflow time allows for efficient soldering and ensures proper bonding to the PCB during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature rating enables safe and effective soldering processes for secure connections.

Diode Type: ZENER DIODE

As a Zener diode, this product provides precise voltage regulation and protection against voltage spikes, ensuring system integrity.

Maximum Forward Voltage (VF): 0.9 V

The low forward voltage drop minimizes power loss and allows for efficient energy conversion in the circuit.

Nominal Reference Voltage: 28 V

With a stable reference voltage, this diode is ideal for voltage regulation and precision measurement applications.

Technology: ZENER

Utilizing Zener technology, this diode offers accurate voltage regulation and protection, enhancing the stability of electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy installation and handling during assembly, contributing to a streamlined production process.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures proper current flow and protects the circuit from reverse voltage conditions, enhancing overall reliability.

Diode Element Material: SILICON

Made of silicon, the diode element provides consistent performance and durability, making it a long-lasting choice for various applications.

Technical Specifications

Zener Diodes MMSZ5255ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

44 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

600 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

28 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

21 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

4.5 mA

Trade Compliance

MMSZ5255ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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