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MMSZ5254ET1

Onsemi

MMSZ5254ET1 by Onsemi

The Onsemi MMSZ5254ET1 is a Zener diode with 27V nominal reference voltage, 5% max voltage tolerance, and 41 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and signal conditioning circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,691 parts In-Stock

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Digiode

USA . 664 parts In-Stock

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664

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Distributors (Availability)

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AZTECH Wire

Italy . 304 parts In-Stock

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$8.190

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304

$8.190

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Component Stockers USA

USA . 335 parts In-Stock

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$99.990

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335

$99.990

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TANS Electronics

Latvia . 7,748 parts In-Stock

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7,748

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Kulean Microsystems

USA . 5,085 parts In-Stock

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SupplyDigital Components

Austria . 4,469 parts In-Stock

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Problanco Electronics

Mexico . 1,477 parts In-Stock

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1,477

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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713

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Corphita

USA . 611 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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Overview

Unlock new possibilities with the MMSZ5254ET1 Zener Diode by Onsemi. This high-quality product offers exceptional performance and reliability, thanks to the renowned manufacturer's commitment to excellence. Ideal for a wide range of applications, this Zener Diode provides precise voltage regulation and protection in a compact and versatile package. Trust Onsemi to deliver superior quality and value, giving you the advantage you need to succeed. Elevate your projects with the MMSZ5254ET1 Zener Diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Working Test Current: 4.6 mA

The low working test current ensures efficiency and reliability in operation.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions.

Nominal Reference Voltage: 27 V

The 27V nominal reference voltage makes it suitable for applications requiring this specific voltage regulation.

Technical Specifications

Zener Diodes MMSZ5254ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

41 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

27 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

4.6 mA

Trade Compliance

MMSZ5254ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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