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MMSZ5240ET1

Onsemi

MMSZ5240ET1 by Onsemi

The Onsemi MMSZ5240ET1 is a Zener diode with 10V nominal reference voltage, 20mA test current, and 5% voltage tolerance. It operates b/w -55 to 150 °C and has a max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in compact electronic circuits.

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AZTECH Wire

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Component Stockers USA

USA . 591 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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Overview

Elevate your electronic projects with the top-notch quality of the MMSZ5240ET1 Zener Diode by Onsemi. Manufactured with precision and expertise, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, this Zener diode ensures stable voltage regulation and protection against overvoltage events. Say goodbye to worries about power surges and fluctuations, as this product guarantees optimal functionality and peace of mind. Upgrade your circuits today with the MMSZ5240ET1 and experience the difference in quality and efficiency that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the Zener diode lightweight and durable, ideal for various electronic applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier for users to incorporate into their projects.

Working Test Current: 20 mA

The working test current of 20 mA ensures stable and reliable performance of the Zener diode under normal operating conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape provides a uniform and compact footprint, making it compatible with standard PCB layouts and designs.

No. of Terminals: 2

With only 2 terminals, the Zener diode is easy to connect and solder, suitable for both beginners and experienced users.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers good thermal performance and efficient heat dissipation, ensuring the longevity of the Zener diode.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance provides consistent and accurate voltage regulation, crucial for applications requiring precise control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the Zener diode can withstand elevated temperatures without compromising its performance.

Maximum Dynamic Impedance: 17 ohm

The low maximum dynamic impedance of 17 ohms ensures minimal resistance in the circuit, maintaining stable voltage regulation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows the Zener diode to function reliably in cold environments without issues.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and conductivity, enhancing the Zener diode's electrical performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit connections, allowing users to choose the most suitable orientation for their application.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5W, the Zener diode can handle moderate power levels without overheating or damaging the component.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C ensures reliable soldering during the assembly process, resulting in strong and durable connections.

Diode Type: ZENER DIODE

Being a Zener diode, this product is specifically designed for voltage regulation applications, providing precise and stable voltage output.

Nominal Reference Voltage: 10 V

With a nominal reference voltage of 10V, this Zener diode is suitable for applications requiring a fixed voltage reference point.

Technology: ZENER

Built using Zener technology, this diode offers reliable and consistent voltage regulation, making it a dependable choice for various electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and connection, ensuring a secure electrical contact for optimal performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity simplifies circuit design by ensuring consistent voltage regulation in one direction, reducing the risk of reversed voltage.

Diode Element Material: SILICON

Constructed with silicon diode element material, this Zener diode offers excellent electrical properties, such as low leakage current and high reliability.

Technical Specifications

Zener Diodes MMSZ5240ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

17 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5240ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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