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MMSZ5237ET1

Onsemi

MMSZ5237ET1 by Onsemi

MMSZ5237ET1 by Onsemi is a Zener diode with 8.2V nominal reference voltage, 5% max voltage tolerance, and 20mA working test current. It is used in applications requiring precise voltage regulation in compact electronic circuits.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

3,000

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 366 parts In-Stock

1+ parts

$0.041

100+ parts

-

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366

$0.041

-

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Vyrian

USA . 5,988 parts In-Stock

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5,988

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Distributors (Availability)

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Corphita

USA . 2,241 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

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2,241

$0.039

-

-

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Corohmni

South Africa . 488 parts In-Stock

1+ parts

$0.043

100+ parts

-

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488

$0.043

-

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AZTECH Wire

Italy . 618 parts In-Stock

1+ parts

$16.970

100+ parts

-

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618

$16.970

-

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Component Stockers USA

USA . 718 parts In-Stock

1+ parts

$99.990

100+ parts

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718

$99.990

-

-

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Problanco Electronics

Mexico . 8,353 parts In-Stock

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8,353

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Kulean Microsystems

USA . 7,580 parts In-Stock

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7,580

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SupplyDigital Components

Austria . 4,920 parts In-Stock

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4,920

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TANS Electronics

Latvia . 3,834 parts In-Stock

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3,834

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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7

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Overview

Unlock the power of precision with the MMSZ5237ET1 Zener Diode by Onsemi. Manufactured by a trusted industry leader, this diode offers unparalleled quality and reliability. Ideal for a wide range of applications, this diode provides stable voltage regulation, ensuring a consistent and efficient performance. With Onsemi's commitment to excellence, you can trust that this product will deliver exceptional value and benefits, making it the perfect choice for your electronic projects. Elevate your designs with the MMSZ5237ET1 Zener Diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection for the diode, making it durable and long-lasting.

Working Test Current: 20 mA

The working test current of 20 mA ensures reliable performance in various electronic circuits.

Surface Mount: YES

Being surface mountable makes installation easy and saves space on the PCB.

Maximum Voltage Tolerance: 5 %

With a low maximum voltage tolerance of 5%, this diode provides accurate voltage regulation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for use in a wide range of environments.

Maximum Dynamic Impedance: 8 ohm

Low dynamic impedance ensures stable voltage regulation and minimal signal distortion.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish allows for easy soldering and secure connections.

Nominal Reference Voltage: 8.2 V

The nominal reference voltage of 8.2 V makes this diode suitable for voltage regulation applications.

Technical Specifications

Zener Diodes MMSZ5237ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

8 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

8.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5237ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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