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MMSZ5226ET1G

Onsemi

MMSZ5226ET1G by Onsemi

MMSZ5226ET1G by Onsemi is a Zener diode with 3.3V nominal reference voltage, 5% max voltage tolerance, and 28 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,000 parts In-Stock

1+ parts

-

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$0.053

1k+ parts

$0.044

10k+ parts

$0.039

30,000

-

$0.053

$0.044

$0.039

Verical

USA . 30,000 parts In-Stock

1+ parts

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$0.049

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$0.049

Distributors (In-Stock)

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Digiode

USA . 299 parts In-Stock

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$0.041

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299

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R&J Components

USA . 9,000 parts In-Stock

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Vyrian

USA . 7,125 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,845 parts In-Stock

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$0.039

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$0.039

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Component Stockers USA

USA . 23,425 parts In-Stock

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$0.040

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$0.040

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$0.040

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$0.040

23,425

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 252 parts In-Stock

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$0.043

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252

$0.043

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AZTECH Wire

Italy . 218 parts In-Stock

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$8.620

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218

$8.620

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Continental Prestige Electronics

USA . 30,000 parts In-Stock

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$0.042

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QUARKTWIN TECHNOLOGY LTD

USA . 18,823 parts In-Stock

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TANS Electronics

Latvia . 3,963 parts In-Stock

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Problanco Electronics

Mexico . 1,869 parts In-Stock

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Kulean Microsystems

USA . 1,335 parts In-Stock

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SupplyDigital Components

Austria . 684 parts In-Stock

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UHIMA Technologies

Türkiye . 631 parts In-Stock

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631

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Overview

Discover the power of reliable protection with the MMSZ5226ET1G Zener Diode by Onsemi. Crafted with precision and quality materials, this product offers unparalleled performance in a compact package. Ideal for a wide range of applications, this Zener diode ensures stable voltage regulation and protection against electrical surges. Trust in Onsemi's expertise and elevate your projects with the MMSZ5226ET1G Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, making it suitable for various applications.

Working Test Current: 20 mA

The working test current of 20 mA ensures stable and reliable operation of the diode within its specified limits.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and space.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures precise voltage regulation and consistency in performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the diode can withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 0.5 W

The maximum power dissipation of 0.5 W indicates the diode's ability to handle moderate power levels, making it suitable for a variety of applications.

Diode Type: ZENER DIODE

Being a Zener diode, it allows for precise voltage regulation and stabilization, making it ideal for voltage reference and protection circuits.

Nominal Reference Voltage: 3.3 V

The nominal reference voltage of 3.3 V provides a stable reference point for voltage regulation in circuits.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the diode only conducts current in one direction, improving circuit efficiency and protection.

Technical Specifications

Zener Diodes MMSZ5226ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5226ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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