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MMSZ5226ET1

Onsemi

MMSZ5226ET1 by Onsemi

MMSZ5226ET1 by Onsemi is a Zener diode with 3.3V nominal reference voltage, 5% max voltage tolerance, and 28 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,525 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 164 parts In-Stock

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$17.890

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SupplyDigital Components

Austria . 7,743 parts In-Stock

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TANS Electronics

Latvia . 4,798 parts In-Stock

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Problanco Electronics

Mexico . 2,534 parts In-Stock

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Corphita

USA . 949 parts In-Stock

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Kulean Microsystems

USA . 746 parts In-Stock

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UHIMA Technologies

Türkiye . 461 parts In-Stock

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Corohmni

South Africa . 451 parts In-Stock

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Overview

Onsemi's MMSZ5226ET1 Zener Diode is a game-changer in the world of electronics. With its high-quality construction and reliable performance, this diode is perfect for a wide range of applications. Whether you're looking to stabilize voltage or protect circuits from overvoltage, this diode has got you covered. Trust Onsemi's expertise in semiconductor manufacturing to deliver top-notch products that provide unmatched value and benefits to customers. Upgrade your electronics with the MMSZ5226ET1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, ensuring durability and reliability.

Working Test Current: 20 mA

Suitable working test current ensures stable and consistent performance of the diode.

Surface Mount: YES

Surface mount capability makes it easier to mount and solder the diode onto circuit boards, saving space and labor.

Maximum Voltage Tolerance: 5 %

High voltage tolerance ensures stable operation under varying input conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the diode to function reliably in different environments.

Maximum Power Dissipation: 0.5 W

Good power dissipation capability ensures the diode can handle high power levels without overheating.

Nominal Reference Voltage: 3.3 V

Stable and accurate reference voltage of 3.3 V makes it suitable for various electronic applications.

Technical Specifications

Zener Diodes MMSZ5226ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5226ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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