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MMSZ5226BT3G

Onsemi

MMSZ5226BT3G by Onsemi

MMSZ5226BT3G by Onsemi is a Zener diode with 3.3V nominal reference voltage, 5% max voltage tolerance, and 28 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and gull wing terminal form.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

6,000

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,211 parts In-Stock

1+ parts

$0.024

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-

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2,211

$0.024

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Vyrian

USA . 3,733 parts In-Stock

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3,733

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Distributors (Availability)

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Corphita

USA . 1,850 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,850

$0.022

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Corohmni

South Africa . 436 parts In-Stock

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$0.025

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436

$0.025

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AZTECH Wire

Italy . 136 parts In-Stock

1+ parts

$11.990

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136

$11.990

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QUARKTWIN TECHNOLOGY LTD

USA . 21,899 parts In-Stock

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21,899

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RC Electronics

USA . 9,000 parts In-Stock

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Kulean Microsystems

USA . 4,800 parts In-Stock

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4,800

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SupplyDigital Components

Austria . 4,739 parts In-Stock

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4,739

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Problanco Electronics

Mexico . 1,628 parts In-Stock

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1,628

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TANS Electronics

Latvia . 1,567 parts In-Stock

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1,567

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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939

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Overview

Experience the unmatched quality and reliability of Onsemi with the MMSZ5226BT3G Zener Diode. This versatile component is perfect for a wide range of applications, offering precise voltage regulation and protection against voltage spikes. With Onsemi's reputation for excellence in manufacturing, you can trust that this diode will deliver consistent performance and durability. Upgrade your electronics with the MMSZ5226BT3G and enjoy the peace of mind knowing your circuits are well-protected and optimized for efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diode, making it suitable for a variety of applications.

Working Test Current: 20 mA

Ensures reliable performance and safe operation within specified current limits.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Voltage Tolerance: 5 %

Ensures consistent and accurate voltage regulation in a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

Allows the diode to withstand high temperatures without compromising performance or reliability.

Maximum Power Dissipation: 0.5 W

Capable of handling moderate power levels, making it suitable for various circuit designs.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation and transient suppression applications, providing reliable performance in critical circuit functions.

Nominal Reference Voltage: 3.3 V

Provides a stable voltage reference for precision circuit operation and voltage regulation.

Technical Specifications

Zener Diodes MMSZ5226BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5226BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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