Loading...

MMSZ5222BT3G

Onsemi

MMSZ5222BT3G by Onsemi

MMSZ5222BT3G by Onsemi is a Zener diode with 2.5V nominal reference voltage and 30 ohm max dynamic impedance. It operates at up to 150 °C, has a power dissipation of 0.5W, and is suitable for applications requiring precise voltage regulation in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,730

-

-

-

-

Digiode

USA . 1,153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,153

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 117 parts In-Stock

1+ parts

$14.330

100+ parts

-

1k+ parts

-

10k+ parts

-

117

$14.330

-

-

-

Problanco Electronics

Mexico . 3,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,680

-

-

-

-

Corphita

USA . 2,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,470

-

-

-

-

SupplyDigital Components

Austria . 1,474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,474

-

-

-

-

Kulean Microsystems

USA . 859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

859

-

-

-

-

UHIMA Technologies

Türkiye . 668 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

668

-

-

-

-

TANS Electronics

Latvia . 588 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

588

-

-

-

-

Corohmni

South Africa . 430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

430

-

-

-

-

Overview

Discover the power of precision with the MMSZ5222BT3G Zener Diode by Onsemi. Crafted with expertise and quality in mind, this small outline diode offers unparalleled performance and reliability. Perfect for a variety of applications, this product ensures accurate voltage regulation and protection for your electronic devices. Trust in Onsemi's reputation for excellence and enhance your projects with the MMSZ5222BT3G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection to the diode, making it suitable for various applications.

Working Test Current: 20 mA

The 20 mA working test current ensures stable and reliable performance under normal operating conditions.

Surface Mount: YES

Being surface mountable, this diode is easy to install and saves space on the PCB.

Maximum Voltage Tolerance: 5%

With a tight tolerance of 5%, this diode ensures precise voltage regulation in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the diode to function in demanding environments.

Maximum Power Dissipation: 0.5 W

The 0.5 W maximum power dissipation capability ensures the diode can handle transient power surges without getting damaged.

Nominal Reference Voltage: 2.5 V

The 2.5 V nominal reference voltage makes this diode suitable for voltage regulation applications.

Diode Element Material: SILICON

The silicon diode element material provides stable and consistent performance over a wide range of temperatures.

Technical Specifications

Zener Diodes MMSZ5222BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

2.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5222BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20