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MMSZ4703ET1

Onsemi

MMSZ4703ET1 by Onsemi

The Onsemi MMSZ4703ET1 is a Zener diode with a nominal reference voltage of 16V and max power dissipation of 0.5W. It operates at temperatures up to 150 °C, suitable for applications requiring precise voltage regulation in compact electronic devices. With UL recognition, it is ideal for surface mount designs needing a unidirectional Zener diode solution.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 1,025 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,490 parts In-Stock

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Kepictronics

USA . 23,945 parts In-Stock

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SupplyDigital Components

Austria . 6,922 parts In-Stock

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Kulean Microsystems

USA . 2,349 parts In-Stock

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Problanco Electronics

Mexico . 1,607 parts In-Stock

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UHIMA Technologies

Türkiye . 772 parts In-Stock

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TANS Electronics

Latvia . 741 parts In-Stock

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Corohmni

South Africa . 56 parts In-Stock

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Overview

Unlock the power of precision with the MMSZ4703ET1 Zener Diode by Onsemi. Manufactured with top-quality materials and advanced technology, this small outline diode offers a 16V nominal reference voltage with a 5% maximum voltage tolerance. Perfect for a wide range of applications, this Zener diode is designed to provide reliable and consistent performance in a compact package. Trust Onsemi for superior quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring reliability in various operating conditions.

Working Test Current: 0.05 mA

Allows for precise testing and control of the diode's performance.

Surface Mount: YES

Facilitates easy installation and space-saving on circuit boards.

Maximum Voltage Tolerance: 5 %

Ensures stable and accurate voltage regulation within a small tolerance range.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments without performance degradation.

Maximum Power Dissipation: 0.5 W

Can handle moderate power levels without overheating or damage.

Nominal Reference Voltage: 16 V

Provides a stable voltage reference point for precision circuit applications.

Polarity: UNIDIRECTIONAL

Ensures that voltage regulation only occurs in one direction, preventing reverse voltage damage.

Technical Specifications

Zener Diodes MMSZ4703ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

16 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

MMSZ4703ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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