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MMSZ4689ET1

Onsemi

MMSZ4689ET1 by Onsemi

MMSZ4689ET1 by Onsemi is a Zener diode with 5.1V nominal reference voltage, 0.05 mA test current, and 5% voltage tolerance. It is a small outline package suitable for surface mount applications in electronics for voltage regulation.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 44,588 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

44,588

-

$0.053

$0.044

$0.039

DigiKey

USA . 44,588 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.070

44,588

-

-

-

$0.070

Verical

USA . 44,588 parts In-Stock

1+ parts

-

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$0.049

44,588

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-

$0.049

Distributors (In-Stock)

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Nova Conductors

Japan . 77 parts In-Stock

1+ parts

$0.039

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-

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77

$0.039

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Digiode

USA . 285 parts In-Stock

1+ parts

$0.041

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285

$0.041

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DigiKey Marketplace

USA . 44,588 parts In-Stock

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44,588

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Vyrian

USA . 2,184 parts In-Stock

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2,184

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Distributors (Availability)

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Ampacity Inc.

Singapore . 44,375 parts In-Stock

1+ parts

$0.037

100+ parts

-

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44,375

$0.037

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Semicontronic

India . 44,157 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

10k+ parts

-

44,157

$0.037

$0.036

$0.036

-

Corohmni

South Africa . 491 parts In-Stock

1+ parts

$0.038

100+ parts

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491

$0.038

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.039

100+ parts

$0.038

1k+ parts

-

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2,000

$0.039

$0.038

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Corphita

USA . 1,013 parts In-Stock

1+ parts

$0.039

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1,013

$0.039

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Aztec Data Supply Inc.

USA . 2,917 parts In-Stock

1+ parts

$0.040

100+ parts

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2,917

$0.040

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AZTECH Wire

Italy . 104 parts In-Stock

1+ parts

$14.200

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104

$14.200

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Continental Prestige Electronics

USA . 44,588 parts In-Stock

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$0.042

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44,588

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$0.042

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QUARKTWIN TECHNOLOGY LTD

USA . 24,689 parts In-Stock

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24,689

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Problanco Electronics

Mexico . 7,892 parts In-Stock

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7,892

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Kulean Microsystems

USA . 7,176 parts In-Stock

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7,176

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Argo Parts USA

USA . 3,305 parts In-Stock

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3,305

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SupplyDigital Components

Austria . 2,957 parts In-Stock

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2,957

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UHIMA Technologies

Türkiye . 963 parts In-Stock

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963

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TANS Electronics

Latvia . 203 parts In-Stock

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203

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Overview

Unlock a world of precision and reliability with the MMSZ4689ET1 Zener Diode by Onsemi. Crafted with the highest quality materials, this small outline package delivers unparalleled performance in a wide range of applications. With a nominal reference voltage of 5.1V and a maximum operating temperature of 150°C, this diode ensures optimal functionality even in the most demanding conditions. Trust Onsemi's expertise in semiconductor manufacturing to provide you with the value, benefits, and advantages you need for your projects. Experience the difference with the MMSZ4689ET1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the zener diode, making it suitable for various applications.

Working Test Current: 0.05 mA

The low working test current of 0.05 mA indicates that this zener diode can operate efficiently with minimal power consumption.

Surface Mount: YES

Being surface mountable, this zener diode can be easily and securely mounted on a circuit board, saving space and facilitating automated assembly.

Maximum Voltage Tolerance: 5 %

The maximum voltage tolerance of 5% ensures accurate and consistent voltage regulation in various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this zener diode can withstand high temperatures without compromising its performance, making it suitable for industrial applications.

Nominal Reference Voltage: 5.1 V

The nominal reference voltage of 5.1 V indicates the specific voltage at which this zener diode will start conducting in the reverse direction, providing precise voltage regulation.

Technical Specifications

Zener Diodes MMSZ4689ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

MMSZ4689ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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