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MMSZ4684ET3

Onsemi

MMSZ4684ET3 by Onsemi

MMSZ4684ET3 by Onsemi is a Zener diode with 3.3V nominal reference voltage and 5.15% max voltage tolerance. It operates at up to 150 °C, has a power dissipation of 0.5W, and is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,210 parts In-Stock

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Digiode

USA . 83 parts In-Stock

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AZTECH Wire

Italy . 967 parts In-Stock

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$13.430

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QUARKTWIN TECHNOLOGY LTD

USA . 25,165 parts In-Stock

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TANS Electronics

Latvia . 6,960 parts In-Stock

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SupplyDigital Components

Austria . 5,229 parts In-Stock

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Kulean Microsystems

USA . 2,906 parts In-Stock

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Problanco Electronics

Mexico . 2,270 parts In-Stock

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Corphita

USA . 1,283 parts In-Stock

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Corohmni

South Africa . 232 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Unlock the power of precision with the MMSZ4684ET3 Zener Diode by Onsemi. This high-quality component offers unparalleled reliability and performance, making it ideal for a wide range of applications. Whether you're looking to regulate voltage in automotive electronics or enhance signal processing in telecommunications equipment, this Zener diode delivers exceptional value and benefits. Trust Onsemi's expertise in semiconductor technology to provide you with the cutting-edge solutions you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term performance.

Working Test Current: 0.05 mA

Efficiently operates at low currents, suitable for various electronic applications.

Surface Mount: YES

Easy to install and saves space on the circuit board.

Maximum Voltage Tolerance: 5.15 %

Provides precise voltage regulation, ensuring stable operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for industrial applications.

Nominal Reference Voltage: 3.3 V

Provides a specific voltage reference point, essential for voltage regulation.

Technical Specifications

Zener Diodes MMSZ4684ET3 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.15 %

Working Test Current:

.05 mA

Trade Compliance

MMSZ4684ET3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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