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MMSZ3V6T3G

Onsemi

MMSZ3V6T3G by Onsemi

The Onsemi MMSZ3V6T3G is a Zener diode with a nominal reference voltage of 3.6V and max operating temperature of 150 °C. It has a working test current of 5mA, max power dissipation of 0.5W, and surface mount configuration making it ideal for voltage regulation in electronic circuits.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 700,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

700,000

-

$0.066

$0.055

$0.049

Verical

USA . 700,000 parts In-Stock

1+ parts

-

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-

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$0.061

700,000

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-

-

$0.061

Distributors (In-Stock)

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Digiode

USA . 2,078 parts In-Stock

1+ parts

$0.051

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2,078

$0.051

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DigiKey Marketplace

USA . 720,000 parts In-Stock

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$0.060

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720,000

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-

$0.060

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Vyrian

USA . 4,482 parts In-Stock

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4,482

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Ack Elektronik San.Tic.Ltd.Sti

. 2,260 parts In-Stock

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2,260

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Distributors (Availability)

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Corohmni

South Africa . 431 parts In-Stock

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$0.048

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431

$0.048

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Corphita

USA . 2,281 parts In-Stock

1+ parts

$0.049

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2,281

$0.049

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AZTECH Wire

Italy . 1,198 parts In-Stock

1+ parts

$14.400

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1,198

$14.400

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Continental Prestige Electronics

USA . 720,000 parts In-Stock

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$0.052

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$0.052

TANS Electronics

Latvia . 3,219 parts In-Stock

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3,219

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Problanco Electronics

Mexico . 2,886 parts In-Stock

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SupplyDigital Components

Austria . 2,825 parts In-Stock

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Kulean Microsystems

USA . 1,498 parts In-Stock

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UHIMA Technologies

Türkiye . 811 parts In-Stock

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Overview

Unleash the power of precision with the MMSZ3V6T3G Zener Diode from Onsemi. Crafted with top-quality materials and cutting-edge technology, this single-config diode offers a reliable solution for a wide range of applications. Whether you're working on electronics, telecommunications, or automotive systems, this small outline package delivers unmatched performance and efficiency. With a 5% voltage tolerance and a nominal reference voltage of 3.6V, the MMSZ3V6T3G ensures smooth operation even in challenging conditions. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode, ensuring reliability and durability in various operating conditions.

Working Test Current: 5 mA

Low working test current of 5 mA indicates low power consumption and efficient performance of the Zener diode.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and enabling automated assembly processes.

Maximum Voltage Tolerance: 5 %

High voltage tolerance of 5% ensures stable and accurate voltage regulation, making it suitable for precision electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures reliable performance in demanding environments without compromising functionality.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this Zener diode can handle moderate power levels, making it versatile for various applications.

Nominal Reference Voltage: 3.6 V

The nominal reference voltage of 3.6 V provides stable voltage regulation at the specified value, ensuring consistent performance in electronic circuits.

Technical Specifications

Zener Diodes MMSZ3V6T3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

90 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

MMSZ3V6T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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