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MMSZ12ET1

Onsemi

MMSZ12ET1 by Onsemi

MMSZ12ET1 by Onsemi is a Zener diode with 12V nominal reference voltage and 5% max voltage tolerance. It has a max power dissipation of 0.5W, operating temperature up to 150 °C, and dynamic impedance of 25 ohm. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.075

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,915 parts In-Stock

1+ parts

-

100+ parts

$0.075

1k+ parts

$0.063

10k+ parts

$0.056

2,915

-

$0.075

$0.063

$0.056

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 400 parts In-Stock

1+ parts

$0.059

100+ parts

-

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400

$0.059

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Vyrian

USA . 2,543 parts In-Stock

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2,543

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,463 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

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1,463

$0.056

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-

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Corohmni

South Africa . 192 parts In-Stock

1+ parts

$0.062

100+ parts

-

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192

$0.062

-

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AZTECH Wire

Italy . 824 parts In-Stock

1+ parts

$17.630

100+ parts

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824

$17.630

-

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SupplyDigital Components

Austria . 7,576 parts In-Stock

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7,576

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TANS Electronics

Latvia . 3,144 parts In-Stock

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3,144

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Kulean Microsystems

USA . 2,233 parts In-Stock

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2,233

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Problanco Electronics

Mexico . 821 parts In-Stock

1+ parts

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821

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UHIMA Technologies

Türkiye . 144 parts In-Stock

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144

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Overview

Boost your electronic projects with the reliable MMSZ12ET1 Zener diode by Onsemi! Known for their top-notch quality and cutting-edge technology, Onsemi delivers high-performance components that ensure optimal functionality. This Zener diode is perfect for voltage regulation, surge protection, and signal clipping applications. With a nominal reference voltage of 12V and a maximum power dissipation of 0.5W, this small outline package offers customers excellent value and efficiency. Upgrade your circuits with the MMSZ12ET1 and experience superior performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and protection for the zener diode, ensuring a long lifespan.

Working Test Current: 5 mA

The 5 mA working test current allows for reliable performance under typical operating conditions.

Surface Mount: YES

The surface mount capability makes installation and placement of the zener diode easy and efficient.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures precise and consistent voltage regulation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the zener diode to function in a wide range of environmental conditions.

Maximum Power Dissipation: 0.5 W

The 0.5 W maximum power dissipation capability ensures the zener diode can handle high power loads without overheating.

Nominal Reference Voltage: 12 V

The 12 V nominal reference voltage provides a stable reference point for voltage regulation in electronic circuits.

Technical Specifications

Zener Diodes MMSZ12ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

MMSZ12ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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