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MMSD914

Onsemi

MMSD914 by Onsemi

The Onsemi MMSD914 is a single rectifier diode with a max reverse recovery time of 0.004 us. It has a max output current of 0.2 A and can handle up to 100 V in repetitive peak reverse voltage. This diode is commonly used in applications requiring small outline surface mount packages, such as power supplies and battery chargers.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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DigiKey

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Rochester

USA . 8,375 parts In-Stock

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$0.048

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Verical

USA . 8,375 parts In-Stock

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$0.044

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Freelance Electronics

USA . 40 parts In-Stock

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DF Sales Co.

USA . 1,960 parts In-Stock

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DF Sales Co.

USA . 1,960 parts In-Stock

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Digiode

USA . 2,329 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 11,006 parts In-Stock

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Flip Electronics

USA . 22,307 parts In-Stock

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ComSIT Distribution GmbH

Germany . 12,000 parts In-Stock

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Semi Source

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Dan-Mar Components

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Pegasus Components GmbH

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Goldney Electronics S.L.

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Next Level Components, LLC

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ACDS - Activité Composants Distribution Service

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Connector Distribution Corp

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Right Parts Inc.

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Cogito LLC

Ukraine . 1,022 parts In-Stock

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Corohmni

South Africa . 244 parts In-Stock

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Corphita

USA . 2,490 parts In-Stock

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Component Stockers USA

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 168,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Kulean Microsystems

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TANS Electronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Speed Components Ltd (Excess)

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Legend Electronics Inc. (Excess)

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iodParts Technologies Inc.

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UHIMA Technologies

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Overview

Experience the superior quality and reliability of the MMSD914 diode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures that their products meet the highest standards for performance and durability. Ideal for a wide range of applications, this rectifier diode offers exceptional value with its small outline package style, matte tin terminal finish, and dual terminal position. Trust Onsemi to deliver a high-quality product that will exceed your expectations in terms of efficiency, power dissipation, and operating temperature. Choose the MMSD914 for unmatched performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external factors, ensuring the diode's longevity.

Surface Mount: YES

Surface mount capability makes the diode easy to install and suitable for modern electronic circuit designs.

Maximum Reverse Recovery Time: 0.004 us

Low reverse recovery time ensures fast switching capabilities, making it ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high-temperature environments.

Maximum Power Dissipation: 0.4 W

The low power dissipation of 0.4 W ensures energy efficiency and prevents overheating during operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it allows current to flow in only one direction, making it suitable for rectifying alternating current to direct current.

Technical Specifications

Diodes & Rectifiers MMSD914 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHES

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMSD914 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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