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MMSD71RKT1G

Onsemi

MMSD71RKT1G by Onsemi

MMSD71RKT1G by Onsemi is a single rectifier diode with a max forward voltage of 1.2V and output current of 0.2A. It has a small outline package style, operates at up to 150 °C, and features a peak reflow temperature of 260°C. This diode is suitable for applications requiring fast reverse recovery time in surface mount configurations.

Median Price

$0.372

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 6,850 parts In-Stock

1+ parts

$0.372

100+ parts

$0.037

1k+ parts

$0.024

10k+ parts

-

6,850

$0.372

$0.037

$0.024

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Distributors (In-Stock)

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Digiode

USA . 2,036 parts In-Stock

1+ parts

$0.353

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2,036

$0.353

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R&J Components

USA . 12,000 parts In-Stock

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12,000

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Flip Electronics

USA . 6,900 parts In-Stock

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6,900

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Vyrian

USA . 3,072 parts In-Stock

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3,072

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Distributors (Availability)

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Corphita

USA . 2,183 parts In-Stock

1+ parts

$0.335

100+ parts

-

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2,183

$0.335

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Corohmni

South Africa . 409 parts In-Stock

1+ parts

$0.372

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409

$0.372

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AZTECH Wire

Italy . 1,051 parts In-Stock

1+ parts

$18.810

100+ parts

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1,051

$18.810

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Perfect Parts

USA . 47,264 parts In-Stock

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47,264

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Kulean Microsystems

USA . 7,773 parts In-Stock

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7,773

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GreenTree Electronics

Israel . 6,850 parts In-Stock

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6,850

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Authorized Procurement Solutions

USA . 6,850 parts In-Stock

1+ parts

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6,850

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TANS Electronics

Latvia . 6,384 parts In-Stock

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6,384

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SupplyDigital Components

Austria . 1,325 parts In-Stock

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1,325

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Problanco Electronics

Mexico . 1,255 parts In-Stock

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1,255

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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878

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Overview

Experience superior quality and performance with the MMSD71RKT1G diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient diodes and rectifiers for various applications. This single-configured, surface mount diode offers fast reverse recovery time and a low forward voltage, making it ideal for power supply circuits, voltage regulators, and more. Trust Onsemi to provide you with a high-quality product that exceeds your expectations and adds value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments and applications.

Config: SINGLE

Simplified design with a single configuration, making it easy to integrate into circuits.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures efficient and reliable performance in switching applications.

Package Shape: RECTANGULAR

Space-efficient design for compact circuits and PCB layouts.

No. of Terminals: 2

Simplified connection with only two terminals for easy integration.

Package Style (Meter): SMALL OUTLINE

Compact package style for space-constrained applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments.

Terminal Finish: TIN

Provides a reliable and easily solderable terminal finish for secure connections.

Terminal Position: DUAL

Dual terminal position for flexible orientation during installation.

Maximum Power Dissipation: 0.425 W

Efficient power dissipation capability for reliable operation under load.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperatures for efficient soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for robust soldering in manufacturing.

Diode Type: RECTIFIER DIODE

Specifically designed as a rectifier diode for efficient current rectification.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop for minimal power loss during operation.

Maximum Output Current: 0.2 A

Adequate output current capacity for various low-power applications.

Terminal Form: GULL WING

Gull wing terminal form for secure and reliable PCB connections.

Maximum Repetitive Peak Reverse Voltage: 80 V

Sufficient peak reverse voltage rating for reverse polarity protection.

Maximum Non Repetitive Peak Forward Current: 0.5 A

Capable of handling non-repetitive peak forward currents for transient protection.

Diode Element Material: SILICON

Silicon diode element material for reliable and stable performance in various conditions.

Technical Specifications

Diodes & Rectifiers MMSD71RKT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.425 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMSD71RKT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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