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MMFZ3V6T1G

Onsemi

MMFZ3V6T1G by Onsemi

MMFZ3V6T1G by Onsemi is a Zener diode with 3.6V nominal voltage and 500mW max power, ideal for voltage regulation in electronic circuits. Packaged in SOD-123 format, it is surface mountable and comes in a standard package of 3,000 units per reel. Suitable for various applications requiring precise voltage control.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

MMFZ3V6T1G by Onsemi
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Vyrian

USA . 6,969 parts In-Stock

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Digiode

USA . 2,441 parts In-Stock

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AZTECH Wire

Italy . 963 parts In-Stock

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$10.650

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TANS Electronics

Latvia . 8,037 parts In-Stock

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Problanco Electronics

Mexico . 5,193 parts In-Stock

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Kulean Microsystems

USA . 918 parts In-Stock

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UHIMA Technologies

Türkiye . 837 parts In-Stock

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Corphita

USA . 802 parts In-Stock

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SupplyDigital Components

Austria . 599 parts In-Stock

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Corohmni

South Africa . 448 parts In-Stock

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Overview

Discover the MMFZ3V6T1G by Onsemi, a high-quality zener diode that offers unmatched reliability and performance. With a standard package of 3,000, this product is perfect for various applications in the electronics industry. Whether you're working on power supplies or voltage regulation circuits, this diode is designed to deliver exceptional results. Trust Onsemi's reputation for superior manufacturing and innovation, and experience the value and benefits that the MMFZ3V6T1G brings to your projects. Choose quality, choose Onsemi.

Feature Benefit Bullets

Standard Package: 3,000

Purchasing in bulk quantities of 3,000 offers cost savings and ensures a steady supply for future projects.

Category: Diodes

Being a diode, this product is ideal for controlling the direction of current flow in a circuit.

Type: Single Zener Diodes

Single Zener diodes are versatile components commonly used in voltage regulation and protection circuits.

Voltage - Zener (Nom) (Vz): 3.6 V

A Zener voltage of 3.6 V ensures stable and precise operation within a specified voltage range.

Power - Max: 500 mW

With a max power rating of 500 mW, this Zener diode can handle moderate power levels without overheating.

Mounting Type: Surface Mount

Surface mount diodes are easy to install and take up less space on a circuit board, making them suitable for compact designs.

Package / Case: SOD-123

The SOD-123 package offers protection and easy handling during installation, enhancing the overall reliability of the component.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

With an MSL level of 1, this Zener diode can withstand various environmental conditions and maintain its performance over time.

Technical Specifications

Additional Parts MMFZ3V6T1G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Category:

Discrete Semiconductor Products
Diodes Zener Single Zener Diodes

Package / Case:

SOD-123

Power - Max:

500 mW

Voltage - Zener (Nom) (Vz):

3.6 V

Package:

Tape & Reel (TR)

Mounting Type:

Surface Mount

Supplier Device Package:

SOD-123

Standard Package:

3,000

Base Product Number:

MMFZ3V

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MMFZ3V6T1G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0050

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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