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MMFZ33T1G

Onsemi

MMFZ33T1G by Onsemi

MMFZ33T1G by Onsemi is a Zener diode with 33V nominal voltage and 500mW max power. It comes in SOD-123 package for surface mount applications. Ideal for regulating voltage in electronic circuits, ensuring stable operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

MMFZ33T1G by Onsemi
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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,001 parts In-Stock

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Digiode

USA . 1,244 parts In-Stock

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AZTECH Wire

Italy . 259 parts In-Stock

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$13.220

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259

$13.220

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TANS Electronics

Latvia . 6,389 parts In-Stock

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6,389

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Kulean Microsystems

USA . 6,065 parts In-Stock

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Problanco Electronics

Mexico . 1,906 parts In-Stock

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Corphita

USA . 1,634 parts In-Stock

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SupplyDigital Components

Austria . 1,189 parts In-Stock

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UHIMA Technologies

Türkiye . 929 parts In-Stock

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Corohmni

South Africa . 63 parts In-Stock

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Overview

Unleash the power of reliable and high-quality zener diodes with the MMFZ33T1G by Onsemi. Manufactured with precision and expertise, this product offers unmatched performance and durability for a wide range of applications in the electronics industry. From voltage regulation to circuit protection, this zener diode is a versatile solution that provides customers with value, efficiency, and peace of mind. Trust Onsemi to deliver excellence in every component, and elevate your projects to new heights with the MMFZ33T1G.

Feature Benefit Bullets

Standard Package: 3,000

Ideal for manufacturers requiring a large quantity of these zener diodes, providing cost-effectiveness and convenience in bulk purchasing.

Category: Discrete Semiconductor Products

Ensures high quality and reliability as it falls under the category specifically designed for discrete semiconductor components.

Voltage - Zener (Nom) (Vz): 33 V

Provides a stable voltage reference for various electronic applications, ensuring consistent and reliable performance.

Power - Max: 500 mW

Offers a high power rating suitable for a wide range of circuit protection and voltage regulation applications, making it versatile and efficient.

Mounting Type: Surface Mount

Enables easy and secure installation on circuit boards, saving space and simplifying assembly processes.

Package / Case: SOD-123

Features a compact and durable package design, enhancing the overall durability and performance of the zener diode.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Ensures that the zener diode can withstand various environmental conditions without compromising its functionality or reliability.

Technical Specifications

Additional Parts MMFZ33T1G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Category:

Discrete Semiconductor Products
Diodes Zener Single Zener Diodes

Package / Case:

SOD-123

Power - Max:

500 mW

Voltage - Zener (Nom) (Vz):

33 V

Package:

Tape & Reel (TR)

Mounting Type:

Surface Mount

Supplier Device Package:

SOD-123

Standard Package:

3,000

Base Product Number:

MMFZ33

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MMFZ33T1G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0050

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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